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Effect of a Multi-Step Gap-Filling Process to Improve Adhesion between Low-K Films and Metal Patterns

Title
Effect of a Multi-Step Gap-Filling Process to Improve Adhesion between Low-K Films and Metal Patterns
Author
좌용호
Keywords
gap fill; pecvd; low-k; trench pattern; inter metal dielectric; shallow trench isolation
Issue Date
2016-08
Publisher
한국재료학회
Citation
한국재료학회지, v. 26, No. 8, Page. 427-429
Abstract
A multi-step deposition process for the gap-filling of submicrometer trenches using dimethyldimethoxysilane (DMDMOS), (CH3)2Si(OCH3)2, and CxHyOz by plasma enhanced chemical vapor deposition (PECVD) is presented. The multistep process consisted of pre-treatment, deposition, and post-treatment in each deposition step. We obtained low-k films with superior gap-filling properties on the trench patterns without voids or delamination. The newly developed technique for the gapfilling of submicrometer features will have a great impact on inter metal dielectric (IMD) and shallow trench isolation (STI) processes for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universally for other chemical vapor deposition systems.
URI
http://db.koreascholar.com/article?code=316414https://repository.hanyang.ac.kr/handle/20.500.11754/102687
ISSN
2287-7258; 1225-0562
DOI
10.3740/MRSK.2016.26.8.427
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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