Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 좌용호 | - |
dc.date.accessioned | 2019-04-24T02:31:54Z | - |
dc.date.available | 2019-04-24T02:31:54Z | - |
dc.date.issued | 2016-08 | - |
dc.identifier.citation | 한국재료학회지, v. 26, No. 8, Page. 427-429 | en_US |
dc.identifier.issn | 2287-7258 | - |
dc.identifier.issn | 1225-0562 | - |
dc.identifier.uri | http://db.koreascholar.com/article?code=316414 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/102687 | - |
dc.description.abstract | A multi-step deposition process for the gap-filling of submicrometer trenches using dimethyldimethoxysilane (DMDMOS), (CH3)2Si(OCH3)2, and CxHyOz by plasma enhanced chemical vapor deposition (PECVD) is presented. The multistep process consisted of pre-treatment, deposition, and post-treatment in each deposition step. We obtained low-k films with superior gap-filling properties on the trench patterns without voids or delamination. The newly developed technique for the gapfilling of submicrometer features will have a great impact on inter metal dielectric (IMD) and shallow trench isolation (STI) processes for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universally for other chemical vapor deposition systems. | en_US |
dc.language.iso | ko_KR | en_US |
dc.publisher | 한국재료학회 | en_US |
dc.subject | gap fill | en_US |
dc.subject | pecvd | en_US |
dc.subject | low-k | en_US |
dc.subject | trench pattern | en_US |
dc.subject | inter metal dielectric | en_US |
dc.subject | shallow trench isolation | en_US |
dc.title | Effect of a Multi-Step Gap-Filling Process to Improve Adhesion between Low-K Films and Metal Patterns | en_US |
dc.type | Article | en_US |
dc.relation.no | 8 | - |
dc.relation.volume | 26 | - |
dc.identifier.doi | 10.3740/MRSK.2016.26.8.427 | - |
dc.relation.page | 427-429 | - |
dc.relation.journal | 한국재료학회지 | - |
dc.contributor.googleauthor | Lee, Woojin | - |
dc.contributor.googleauthor | Kim, Tae Hyung | - |
dc.contributor.googleauthor | Choa, Yong-Ho | - |
dc.relation.code | 2016018843 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DEPARTMENT OF MATERIALS SCIENCE AND CHEMICAL ENGINEERING | - |
dc.identifier.pid | choa15 | - |
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