열처리 후공정이 HAZO-채널 박막 트랜지스터의 특성에 미치는 영향
- Title
- 열처리 후공정이 HAZO-채널 박막 트랜지스터의 특성에 미치는 영향
- Other Titles
- Effects of thermal post-treatment on the characteristics of HAZO-channel thin film transistors
- Author
- 박진석
- Issue Date
- 2016-07
- Publisher
- 대한전기학회
- Citation
- 2016년도 제47회 대한전기학회 하계학술대회, Page. 1157-1158
- Abstract
- Oxide
thin
film
transistors
(O-TFTs)
were
fabricated
by
using
hafnium-doped
aluminum-zinc
oxide
(HAZO)
films
as
the
active-channel.
The
HAZO
films
were
deposited
via
co-sputtering
method.
Furnace
annealing
was
carried
out
on
the
deposited
HAZO
films.
The
effects
of
the
post-treatment
on
the
transmittance
and
crystalline
structure
of
the
HAZO
films
were
analyzed
as
functions
of
the
post-treatment
conditions
used.
It
was
observed
that
the
off-current
of
the
HAZO-TFTs
drastically
decreased
after
the
furnace
annealing.
The
experiment
results
also
showed
that
furnace
annealing
would
be
an
effective
method
for
improving
the
electrical
characteristics
of
HAZO-TFTs.
- URI
- http://www.dbpia.co.kr/Journal/ArticleDetail/NODE07011763https://repository.hanyang.ac.kr/handle/20.500.11754/102575
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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