열처리 후공정이 HAZO-채널 박막 트랜지스터의 특성에 미치는 영향

Abstract

Oxide thin film transistors (O-TFTs) were fabricated by using hafnium-doped aluminum-zinc oxide (HAZO) films as the active-channel. The HAZO films were deposited via co-sputtering method. Furnace annealing was carried out on the deposited HAZO films. The effects of the post-treatment on the transmittance and crystalline structure of the HAZO films were analyzed as functions of the post-treatment conditions used. It was observed that the off-current of the HAZO-TFTs drastically decreased after the furnace annealing. The experiment results also showed that furnace annealing would be an effective method for improving the electrical characteristics of HAZO-TFTs.