플라즈마 처리가 HAZO-채널 박막 트랜지스터에 미치는 영향
- Title
- 플라즈마 처리가 HAZO-채널 박막 트랜지스터에 미치는 영향
- Other Titles
- Effect of plasma treatment on the characteristics of HAZO-channel thin film transistors
- Author
- 박진석
- Issue Date
- 2016-07
- Publisher
- 대한전기학회
- Citation
- 2016년도 제47회 대한전기학회 하계학술대회, Page. 1155-1156
- Abstract
- Hafnium-aluminum-zinc-oxide
(HAZO)
thin
films
were
deposited
via
co-sputtering
and
thin
film
transistors
(TFTs)
using
the
HAZO
film
as
the
channel
layer
were
fabricated.
Plasma
treatment
using
hydrogen
(H
2
)
and
argon
(Ar)
was
performed
on
the
channel
layer
and
the
source/drain
electrode
regions.
Four
point
probe,
X-ray
diffraction,
and
atomic
force
microscopy
were
used
to
analyze
the
sheet
resistance,
surface
roughness,
and
structure
of
the
deposited
HAZO
films.
Electrical
characteristics
of
HAZO
TFTs
were
investigated
and
the
experimental
results
confirmed
that
H
2
and
Ar
plasma
treatment
enhanced
the
electrical
performances
of
the
HAZO-TFTs.
- URI
- http://www.dbpia.co.kr/Journal/ArticleDetail/NODE07011762https://repository.hanyang.ac.kr/handle/20.500.11754/102573
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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