Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진석 | - |
dc.date.accessioned | 2019-04-23T04:44:29Z | - |
dc.date.available | 2019-04-23T04:44:29Z | - |
dc.date.issued | 2016-07 | - |
dc.identifier.citation | 2016년도 제47회 대한전기학회 하계학술대회, Page. 1155-1156 | en_US |
dc.identifier.uri | http://www.dbpia.co.kr/Journal/ArticleDetail/NODE07011762 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/102573 | - |
dc.description.abstract | Hafnium-aluminum-zinc-oxide (HAZO) thin films were deposited via co-sputtering and thin film transistors (TFTs) using the HAZO film as the channel layer were fabricated. Plasma treatment using hydrogen (H 2 ) and argon (Ar) was performed on the channel layer and the source/drain electrode regions. Four point probe, X-ray diffraction, and atomic force microscopy were used to analyze the sheet resistance, surface roughness, and structure of the deposited HAZO films. Electrical characteristics of HAZO TFTs were investigated and the experimental results confirmed that H 2 and Ar plasma treatment enhanced the electrical performances of the HAZO-TFTs. | en_US |
dc.language.iso | ko_KR | en_US |
dc.publisher | 대한전기학회 | en_US |
dc.title | 플라즈마 처리가 HAZO-채널 박막 트랜지스터에 미치는 영향 | en_US |
dc.title.alternative | Effect of plasma treatment on the characteristics of HAZO-channel thin film transistors | en_US |
dc.type | Article | en_US |
dc.relation.page | 1155-1156 | - |
dc.contributor.googleauthor | 박주희 | - |
dc.contributor.googleauthor | 이상혁 | - |
dc.contributor.googleauthor | 전현식 | - |
dc.contributor.googleauthor | 김원 | - |
dc.contributor.googleauthor | 박진석 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DIVISION OF ELECTRICAL ENGINEERING | - |
dc.identifier.pid | jinsp | - |
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