2023-08 | EAM-integrated DBR-LD with 16-channel and 100-Gbps/lambda PAM-4 modulation | 심종인 |
2011-02 | Effect of current spreading on the efficiency droop of InGaN light-emitting diodes | 심종인 |
2021-10 | Effect of Defects on Strain Relaxation in InGaN/AlGaN Multiple-Quantum-Well Near-Ultraviolet Light-Emitting Diodes | 심종인 |
2008-04 | Effect of Electrode Pattern on Light Emission Distribution in InGaN/GaN Light Emitting Diode | 심종인 |
2020-03 | Effect of Interface State Density of the AlGaN Electron Blocking Layer/GaN Barrier Layer in InGaN Blue Light-Emitting Diodes | 심종인 |
2010-07 | Effect of temperature distribution and current crowding on the performance of lateral GaN-based light-emitting diodes | 심종인 |
2016-01 | Effect of the p-type GaN thickness on the near-ultraviolet light-emitting diodes | 심종인 |
2007-08 | Effect of Waveguide Structure for Suppression of Ripples in the Far-Field Pattern of a 405-nm InGaN-GaN Laser Diode | 심종인 |
2021-09 | Effects of Current, Temperature, and Chip Size on the Performance of AlGaInP-Based Red Micro-Light-Emitting Diodes with Different Contact Schemes | 심종인 |
2012-06 | Effects of polarization field on vertical transport in GaN/AlGaN resonant tunneling diodes | 심종인 |
2004-05 | The Effects of Semi-insulating Current Blocking Layers on Static and Dynamic Characteristics in Direct-modulated Semiconductor Lasers | 심종인 |
2015-05 | Effects of the number of quantum wells on the performance of near-ultraviolet light-emitting diodes | 심종인 |
2016-09 | Effects of unbalanced carrier injection on the performance characteristics of InGaN light-emitting diodes | 심종인 |
2016-01 | Efficiency analysis of AlGaN deep UV-LEDs based on rate equation | 심종인 |
2011-12 | Efficiency and Electron Leakage Characteristics in GaN-Based Light-Emitting Diodes Without AlGaN Electron-Blocking-Layer Structures | 심종인 |
2012-03 | Efficiency droop in AlGaInP and GaInN light-emitting diodes | 심종인 |
2022-02 | Electrochemical Potentiostatic Activation for the Improvement of 270 nm AlGaN-Based UV-C Light-Emitting Diodes | 심종인 |
2019-07 | Electroluminescence from h-BN by using Al2O3/h-BN multiple heterostructure | 심종인 |
2008-03 | An Embedded Wide-Band Spiral Inductor for 10 Gb/s Optical Transceiver Applications | 심종인 |
2022-09 | Enhanced Light Emission from Type-II Red InGaN/GaNSb/GaN Quantum-Well Structures | 심종인 |
2019-02 | Enhanced Radiative Recombination Rate by Local Potential Fluctuation in InGaN/AlGaN Near-Ultraviolet Light-Emitting Diodes | 심종인 |
2009-05 | Enhancement of Light Extraction Efficiency Using Lozenge-Shaped GaN-Based Light-Emitting Diodes | 심종인 |
2009-06 | Enhancing current spreading by simple electrode pattern design methodology in lateral GaN/InGaN LEDs | 심종인 |
2012-06 | Estimate of the Nonradiative Carrier Lifetime in InGaN/GaN Quantum Well Structures by Using Time-resolved Photoluminescence | 심종인 |
2006-10 | Evaluation of radiative efficiency in InGaN blue-violet laser-diode structures using electroluminescence characteristics | 심종인 |
2019-09 | Fabrication of Less Bowed Light-Emitting Diodes on Sapphire Substrates with a SiO2 Thin Film on Their Back Sides | 심종인 |
2002-06 | Facet Reflectivity of a Spot-Size-Converter integrated Semiconductor Optical Amplifier | 심종인 |
2018-02 | Factors determining the carrier distribution in InGaN/GaN multiple-quantum-well light-emitting diodes | 심종인 |
2001-06 | Fast and Accurate Quasi-3-Dimensional Capacitance Determination of Multilayer VLSI Interconnects | 심종인 |
2001-06 | Fast and accurate quasi-three-dimensional capacitance determination of multilayer VLSI interconnects | 심종인 |