Fabrication of Less Bowed Light-Emitting Diodes on Sapphire Substrates with a SiO2 Thin Film on Their Back Sides
- Title
- Fabrication of Less Bowed Light-Emitting Diodes on Sapphire Substrates with a SiO2 Thin Film on Their Back Sides
- Author
- 심종인
- Keywords
- Light-emitting diodes; Stress relaxation; Internal quantum efficiency
- Issue Date
- 2019-09
- Publisher
- KOREAN PHYSICAL SOC
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 75, No. 6, Page. 480-484
- Abstract
- In this study, less bowed light-emitting diodes (LEDs) were fabricated by preparing a LED structure on a sapphire substrate with a SiO2 thin film on its back side. The SiO2 thin film with a low thermal expansion coefficient reduced the bow of the wafer generated by the thermal expansion coefficient difference. As the thickness of SiO2 was increased from 1 μm to 4 μm, the compressive stress in the GaN film was reduced from 16% to 62% with respect to that without
SiO2 thin film. The stress reduction in multiple quantum wells also enhanced the internal quantum efficiency of the LED by reducing the piezoelectric field.
- URI
- https://link.springer.com/article/10.3938/jkps.75.480https://repository.hanyang.ac.kr/handle/20.500.11754/122042
- ISSN
- 0374-4884; 1976-8524
- DOI
- 10.3938/jkps.75.480
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
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