Effects of unbalanced carrier injection on the performance characteristics of InGaN light-emitting diodes
- Title
- Effects of unbalanced carrier injection on the performance characteristics of InGaN light-emitting diodes
- Author
- 심종인
- Keywords
- EFFICIENCY DROOP
- Issue Date
- 2016-09
- Publisher
- IOP PUBLISHING LTD
- Citation
- APPLIED PHYSICS EXPRESS, v. 9, No. 8, Article no. 081002
- Abstract
- Two kinds of InGaN-based light-emitting diodes (LEDs) having different electron concentrations in the n-GaN injection layer are investigated in order to understand the effects of unbalanced carrier injection on LED performance characteristics. Electrical and optical characteristics such as capacitance-voltage, current-voltage, external quantum efficiency, and electroluminescence spectrum are compared and analyzed. It is shown that the unbalanced carrier distribution in multiple quantum wells affects the forward operating voltage since a large disparity of injection rate between electrons and holes can induce a small effective active volume, thus leading to the severe overflow of electrons to the p-(Al)GaN layer in the LED devices. (C) 2016 The Japan Society of Applied Physics
- URI
- http://iopscience.iop.org/article/10.7567/APEX.9.081002/metahttps://repository.hanyang.ac.kr/handle/20.500.11754/69405
- ISSN
- 1882-0778; 1882-0786
- DOI
- 10.7567/APEX.9.081002
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
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