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A 6–18GHz GaN Distributed Power Amplifier Using Reactive Matching Technique and Simplified Bias Network

Title
A 6–18GHz GaN Distributed Power Amplifier Using Reactive Matching Technique and Simplified Bias Network
Author
김정현
Keywords
broadband amplifier; distributed amplifier (DA); GaN MMIC; multi-octave; power amplifier (PA)
Issue Date
2017-06
Publisher
IEEE
Citation
2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Page. 394-397
Abstract
Two-stage reactively matched gain cells are applied to design a high-gain multi-octave distributed power amplifier (DPA) in this paper. The proposed reactively matched distributed amplifier (RMDA) structure shows a high gain and high output power performance within a small die size. The DC bias network of each section is simplified to implement the proposed structure in an MMIC and the design guide for the bias network is provided. A 6–18 GHz GaN DPA fabricated with the commercial 0.25-μm GaN HEMT process shows output power reaching 40.3–43.9 dBm with 16–27% PAE. To the best of our knowledge, this is the first demonstration of a GaN DPA using reactively matched gain cells, and it exhibits excellent small-signal gain and RF power performance capabilities among other reported GaN PAs with a multi-octave bandwidth up to the Ku-band. Index Terms—broadband amplifier, distributed amplifier (DA), GaN MMIC, multi-octave, power amplifier (PA).
URI
https://ieeexplore.ieee.org/document/7969101/http://repository.hanyang.ac.kr/handle/20.500.11754/103423
ISBN
978-1-5090-4626-3
ISSN
2375-0995
DOI
10.1109/RFIC.2017.7969101
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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