Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김정현 | - |
dc.date.accessioned | 2019-05-07T01:02:21Z | - |
dc.date.available | 2019-05-07T01:02:21Z | - |
dc.date.issued | 2017-06 | - |
dc.identifier.citation | 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Page. 394-397 | en_US |
dc.identifier.isbn | 978-1-5090-4626-3 | - |
dc.identifier.issn | 2375-0995 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/7969101/ | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/103423 | - |
dc.description.abstract | Two-stage reactively matched gain cells are applied to design a high-gain multi-octave distributed power amplifier (DPA) in this paper. The proposed reactively matched distributed amplifier (RMDA) structure shows a high gain and high output power performance within a small die size. The DC bias network of each section is simplified to implement the proposed structure in an MMIC and the design guide for the bias network is provided. A 6–18 GHz GaN DPA fabricated with the commercial 0.25-μm GaN HEMT process shows output power reaching 40.3–43.9 dBm with 16–27% PAE. To the best of our knowledge, this is the first demonstration of a GaN DPA using reactively matched gain cells, and it exhibits excellent small-signal gain and RF power performance capabilities among other reported GaN PAs with a multi-octave bandwidth up to the Ku-band. Index Terms—broadband amplifier, distributed amplifier (DA), GaN MMIC, multi-octave, power amplifier (PA). | en_US |
dc.description.sponsorship | This work was supported by Agency for Defense Development, Korea. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | IEEE | en_US |
dc.subject | broadband amplifier | en_US |
dc.subject | distributed amplifier (DA) | en_US |
dc.subject | GaN MMIC | en_US |
dc.subject | multi-octave | en_US |
dc.subject | power amplifier (PA) | en_US |
dc.title | A 6–18GHz GaN Distributed Power Amplifier Using Reactive Matching Technique and Simplified Bias Network | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/RFIC.2017.7969101 | - |
dc.relation.page | 394-397 | - |
dc.contributor.googleauthor | Park, H | - |
dc.contributor.googleauthor | Lee, S | - |
dc.contributor.googleauthor | Choi, K | - |
dc.contributor.googleauthor | Kim, J | - |
dc.contributor.googleauthor | Nam, H | - |
dc.contributor.googleauthor | Kim, J | - |
dc.contributor.googleauthor | Lee, W | - |
dc.contributor.googleauthor | Lee, C | - |
dc.contributor.googleauthor | Kim, J | - |
dc.contributor.googleauthor | Kwon, Y | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF ENGINEERING SCIENCES[E] | - |
dc.sector.department | DIVISION OF ELECTRICAL ENGINEERING | - |
dc.identifier.pid | junhkim | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.