A 6–18GHz GaN Distributed Power Amplifier Using Reactive Matching Technique and Simplified Bias Network
- Title
- A 6–18GHz GaN Distributed Power Amplifier Using Reactive Matching Technique and Simplified Bias Network
- Author
- 김정현
- Keywords
- broadband amplifier; distributed amplifier (DA); GaN MMIC; multi-octave; power amplifier (PA)
- Issue Date
- 2017-06
- Publisher
- IEEE
- Citation
- 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Page. 394-397
- Abstract
- Two-stage reactively matched gain cells are applied to design a high-gain multi-octave distributed power
amplifier (DPA) in this paper. The proposed reactively matched distributed amplifier (RMDA) structure shows a
high gain and high output power performance within a small die size. The DC bias network of each section is simplified to implement the proposed structure in an MMIC and the design guide for the bias network is provided. A 6–18 GHz
GaN DPA fabricated with the commercial 0.25-μm GaN HEMT process shows output power reaching 40.3–43.9 dBm with 16–27% PAE. To the best of our knowledge, this is the first demonstration of a GaN DPA using reactively matched gain cells, and it exhibits excellent small-signal gain and RF power performance capabilities among other reported GaN
PAs with a multi-octave bandwidth up to the Ku-band. Index Terms—broadband amplifier, distributed amplifier
(DA), GaN MMIC, multi-octave, power amplifier (PA).
- URI
- https://ieeexplore.ieee.org/document/7969101/https://repository.hanyang.ac.kr/handle/20.500.11754/103423
- ISBN
- 978-1-5090-4626-3
- ISSN
- 2375-0995
- DOI
- 10.1109/RFIC.2017.7969101
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
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