| 2016-08 | High-Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment | 최창환 |
| 2016-06 | A High-Performance WSe2/h-BN Photodetector using a Triphenylphosphine (PPh3)-Based n-Doping Technique | 최창환 |
| 2019-10 | Highly Sensitive and Full Range Detectable Humidity Sensor using PEDOT:PSS, Methyl Red and Graphene Oxide Materials | 최창환 |
| 2019-11 | Hot-Carrier Degradation Estimation of a Silicon-on-Insulator Tunneling FET Using Ambipolar Characteristics | 최창환 |
| 2011-03 | Impact of diffusionless anneal using dynamic surface anneal on the electrical properties of a high-k/metal gate stack in metal-oxide-semiconductor devices | 최창환 |
| 2022-06 | Improved analog switching characteristics of Ta2O5-based memristor using indium tin oxide buffer layer for neuromorphic computing | 최창환 |
| 2015-01 | Improved high temperature integration of Al2O3 on MoS2 by using a metal oxide buffer layer | 최창환 |
| 2017-05 | Improved performance of gate-last FDSOI tunnel field-effect-transistors (TFETs) with modulating Al2O3 composition in atomic layer deposited HfAlOx gate dielectrics | 최창환 |
| 2019-08 | Improved resistive switching and synaptic characteristics using Ar plasma irradiation on the Ti/HfO2 interface | 최창환 |
| 2021-01 | Improved switching and synapse characteristics using PEALD SiO2 thin film in Cu/SiO2/ZrO2/Pt device | 최창환 |
| 2016-10 | Improvement of the short channel effect in PMOSFETs using cold implantation | 최창환 |
| 2018-09 | In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential | 최창환 |
| 2013-10 | Influence of Different Annealing Ambients on the Properties of Zinc Sulfide Prepared by Atomic Layer Deposition | 최창환 |
| 2018-11 | Influence of in-situ NH3 plasma passivation on the electrical characteristics of Ga-face n-GaN MOS capacitor with atomic layer deposited HfO2 | 최창환 |
| 2018-03 | Influence of oxygen vacancies in ALD HfO2-x thin films on non-volatile resistive switching phenomena with a Ti/HfO2-x/Pt structure | 최창환 |
| 2018-02 | Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors | 최창환 |
| 2019-10 | Investigation of Positive Bias Temperature Instability Characteristics of Fully Depleted Silicon on Insulator Tunneling Field Effect Transistor with High-k Dielectric Gate Stacks | 최창환 |
| 2016-09 | Kesterite Cu2ZnSnS4 (CZTS) Thin Film Formation Using Sequential Annealing Process Under N-2 and H2S Atmosphere | 최창환 |
| 2016-09 | Low Gate Leakage Current and Interface State Density of Atomic Layer Deposition Al2O3 SiC MOS Device with NH3 Plasma Treatment | 최창환 |
| 2022-12 | Low temperature (< 150? Text Color) annealed amorphous indium-gallium-tin oxide (IGTO) thin-film for flash memory application | 최창환 |
| 2022-01 | Memory characteristics of thin film transistor with catalytic metal layer induced crystallized indium-gallium-zinc-oxide (IGZO) channel | 최창환 |
| 2020-05 | Memristive and Synaptic Characteristics of Nitride-Based Heterostructures on Si Substrate | 최창환 |
| 2022-09 | Memristive Switching and Density-Functional Theory Calculations in Double Nitride Insulating Layers | 최창환 |
| 2011-03 | Millisecond Flash Annealing as a Flatband Voltage Shift Enabler for p-Type Metal-Oxide-Semiconductor Devices with High-k/Metal Gate | 최창환 |
| 2020-03 | Monolithic 3D Integration of InGaAs Photodetectors on Si MOSFETs Using Sequential Fabrication Process | 최창환 |
| 2022-03 | Monolithic 3D Integration Process and Its Device Applications | 최창환 |
| 2022-03 | Monolithic 3D Integration With Photosensor and CMOS Circuits Using Ion-Cut Layer Transfer | 최창환 |
| 2019-09 | A Neuromorphic Device Implemented on a Salmon-DNA Electrolyte and its Application to Artificial Neural Networks | 최창환 |
| 2016-04 | Non-Alloyed Ohmic Contacts on GaAs Using Metal-Interlayer-Semiconductor Structure With SF6 Plasma Treatment | 최창환 |
| 2020-12 | A Novel Structure and Operation Scheme of Vertical Channel NAND Flash with Ferroelectric Memory for Multi String Operations | 최창환 |
