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Showing results 61 to 90 of 200

Issue DateTitleAuthor(s)
2007-08Effect of Waveguide Structure for Suppression of Ripples in the Far-Field Pattern of a 405-nm InGaN-GaN Laser Diode심종인
2021-09Effects of Current, Temperature, and Chip Size on the Performance of AlGaInP-Based Red Micro-Light-Emitting Diodes with Different Contact Schemes심종인
2012-06Effects of polarization field on vertical transport in GaN/AlGaN resonant tunneling diodes심종인
2004-05The Effects of Semi-insulating Current Blocking Layers on Static and Dynamic Characteristics in Direct-modulated Semiconductor Lasers심종인
2015-05Effects of the number of quantum wells on the performance of near-ultraviolet light-emitting diodes심종인
2016-09Effects of unbalanced carrier injection on the performance characteristics of InGaN light-emitting diodes심종인
2016-01Efficiency analysis of AlGaN deep UV-LEDs based on rate equation심종인
2011-12Efficiency and Electron Leakage Characteristics in GaN-Based Light-Emitting Diodes Without AlGaN Electron-Blocking-Layer Structures심종인
2012-03Efficiency droop in AlGaInP and GaInN light-emitting diodes심종인
2022-02Electrochemical Potentiostatic Activation for the Improvement of 270 nm AlGaN-Based UV-C Light-Emitting Diodes심종인
2019-07Electroluminescence from h-BN by using Al2O3/h-BN multiple heterostructure심종인
2008-03An Embedded Wide-Band Spiral Inductor for 10 Gb/s Optical Transceiver Applications심종인
2022-09Enhanced Light Emission from Type-II Red InGaN/GaNSb/GaN Quantum-Well Structures심종인
2019-02Enhanced Radiative Recombination Rate by Local Potential Fluctuation in InGaN/AlGaN Near-Ultraviolet Light-Emitting Diodes심종인
2009-05Enhancement of Light Extraction Efficiency Using Lozenge-Shaped GaN-Based Light-Emitting Diodes심종인
2009-06Enhancing current spreading by simple electrode pattern design methodology in lateral GaN/InGaN LEDs심종인
2012-06Estimate of the Nonradiative Carrier Lifetime in InGaN/GaN Quantum Well Structures by Using Time-resolved Photoluminescence심종인
2006-10Evaluation of radiative efficiency in InGaN blue-violet laser-diode structures using electroluminescence characteristics심종인
2019-09Fabrication of Less Bowed Light-Emitting Diodes on Sapphire Substrates with a SiO2 Thin Film on Their Back Sides심종인
2002-06Facet Reflectivity of a Spot-Size-Converter integrated Semiconductor Optical Amplifier심종인
2018-02Factors determining the carrier distribution in InGaN/GaN multiple-quantum-well light-emitting diodes심종인
2001-06Fast and Accurate Quasi-3-Dimensional Capacitance Determination of Multilayer VLSI Interconnects심종인
2001-06Fast and accurate quasi-three-dimensional capacitance determination of multilayer VLSI interconnects심종인
2004-07Fe-doped InP semi-insulating buried heterostructure for high speed and high power operations in directly modulated semiconductor laser심종인
2016-11Forward-Capacitance Measurement on Wide-Bandgap Light-Emitting Diodes심종인
2001-12GaInAsP/InP Distributed Reflector Lasers Consisting of Deeply Etched Vertical Gratings심종인
2012-04GaN계 청색 발광 다이오드에서 저전류 스트레스 후의 광 및 전기적 특성 변화심종인
2002-12Generalized Traveling-Wave-Based Waveform Approximation Technique for the Efficient Signal Integrity Verification of Multicoupled Transmission Line System심종인
2022-07Generation of sidewall defects in InGaN/GaN blue micro-LEDs under forward-current stress심종인
2014-06Graphene interlayer for current spreading enhancement by engineering of barrier height in GaN-based light-emitting diodes심종인
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