Repository at Hanyang UniversityCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학)PHOTONICS AND NANOELECTRONICS(나노광전자학과)Articles
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Fe-doped InP semi-insulating buried heterostructure for high speed and high power operations in directly modulated semiconductor laser
- Title
- Fe-doped InP semi-insulating buried heterostructure for high speed and high power operations in directly modulated semiconductor laser
- Author
- 심종인
- Keywords
- BLOCKING LAYERS; LEAKAGE CURRENT
- Issue Date
- 2004-07
- Publisher
- IET
- Citation
- ELECTRONICS LETTERS, v.40, No. 15
- Abstract
- A buried heterostructure based on Fe-doped InP semi-insulating layers is optimised for both high output power and large modulation bandwidth operations up to 70degreesC in a 10 Gbit/s directly modulated 1.3 mum lnGaAsP/InP distributed feedback laser. The slope efficiency of 0.19 W/A and -3 dB bandwidth of 10 GHz at 1.5 times threshold cur-rent is demonstrated experimentally.
- URI
- https://ieeexplore.ieee.org/abstract/document/1318879/authors#authorshttps://repository.hanyang.ac.kr/handle/20.500.11754/151198
- ISSN
- 0013-5194
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
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