Enhancement of In-Sn-Ga-O TFT performance by the synergistic combination of UV + O-3 radiation and low temperature annealing
- Title
- Enhancement of In-Sn-Ga-O TFT performance by the synergistic combination of UV + O-3 radiation and low temperature annealing
- Author
- 박진성
- Keywords
- Oxide semiconductor; Thin film transistor; Ozone; UV
- Issue Date
- 2016-10
- Publisher
- SPRINGER
- Citation
- JOURNAL OF ELECTROCERAMICS, v. 37, NO. 1-4, Page. 158-162
- Abstract
- High performance thin film transistors (TFTs) based on amorphous In-Sn-Ga-O (ITGO) semiconductor were fabricated. In order to activate the electrical properties of the oxide semiconductor, different processes were used, involving thermal annealing, UV + O-3 (UVO) radiation, and UVO-assisted thermal annealing. While either UV radiation or thermal annealing at 150 A degrees C results in rather poor transfer characteristics, the combination of both allows the fabrication of high performance devices with field effect mobility values exceeding 20 cm(2)/Vs. X-ray photoelectron spectroscopy (XPS) analyses of ITGO films suggest that the density of defects related to oxygen-deficient sites are reduced upon UVO-assisted annealing. Also, hydroxide bonds are found to increase in the semiconductor material, which is highly likely to increase the free carrier concentration. The reduction of oxygen-related defects results in a decrease in charge trap density near the semiconductor/gate dielectric interface, and the UV-assisted annealed ITGO devices exhibit relatively small shifts in the threshold voltage (V-th) under positive bias stress.
- URI
- https://link.springer.com/article/10.1007%2Fs10832-016-0053-yhttps://repository.hanyang.ac.kr/handle/20.500.11754/81118
- ISSN
- 1385-3449; 1573-8663
- DOI
- 10.1007/s10832-016-0053-y
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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