Light output performance of red AlGaInP-based light emitting diodes with different chip geometries and structures
- Title
- Light output performance of red AlGaInP-based light emitting diodes with different chip geometries and structures
- Author
- 심종인
- Keywords
- SURFACE RECOMBINATION; MICRO-LEDS; EFFICIENCY; DISPLAY
- Issue Date
- 2018-04
- Publisher
- OPTICAL SOC AMER
- Citation
- OPTICS EXPRESS, v. 26, No. 9, Page. 11194-11200
- Abstract
- We investigated the optical and electrical properties of red AlGaInP light-emitting diodes (LEDs) as functions of chip size, p-cladding layer thickness, and the number of multi-quantum wells (MQWs). External quantum efficiency (EQE) decreased with decreasing chip size. The ideality factor gradually increased from 1.47 to 1.95 as the chip size decreased from 350 mu m to 15 mu m. This indicates that the smaller LEDs experienced larger carrier loss due to Shockley-Read-Hall nonradiative recombination at sidewall defects. S parameter, defined as partial derivative lnL/partial derivative lnI, increased with decreasing chip size. Simulations and experimental results showed that smaller LEDs with 5 pairs of MQWs had over 30% higher IQE at 5 A/cm(2) than the LED with 20 pairs of MQWs. These results show that the optimization of the number of QWs is needed to obtain maximum EQE of micro-LEDs. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.
- URI
- https://www.osapublishing.org/oe/fulltext.cfm?uri=oe-26-9-11194&id=385647https://repository.hanyang.ac.kr/handle/20.500.11754/80989
- ISSN
- 1094-4087
- DOI
- 10.1364/OE.26.011194
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > PHOTONICS AND NANOELECTRONICS(나노광전자학과) > Articles
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML