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dc.contributor.author강보수-
dc.date.accessioned2018-11-09T06:03:58Z-
dc.date.available2018-11-09T06:03:58Z-
dc.date.issued2008-05-
dc.identifier.citationAPPLIED PHYSICS LETTERS, v. 92, No. 20, Article no. 202112en_US
dc.identifier.issn0003-6951-
dc.identifier.urihttps://aip.scitation.org/doi/abs/10.1063/1.2936087-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/80297-
dc.description.abstractThe behavior of unipolar resistance switching in NiO thin film was investigated. The switching current and the switching voltage alone did not follow statistical distribution. Instead, it was observed that product of switching current and switching voltage; namely, switching power follows Poisson's distribution. An electrical manipulation-pulse train, for example-was suggested in order to minimize switching failure based on the above Poisson's distribution behavior. (C) 2008 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.publisherAMER INST PHYSICSen_US
dc.subjectNONVOLATILE MEMORYen_US
dc.subjectDOPED SRTIO3en_US
dc.subjectHIGH-DENSITYen_US
dc.titleInterpretation of nanoscale conducting paths and their control in nickel oxide (NiO) thin filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2936087-
dc.relation.journalAPPLIED PHYSICS LETTERS-
dc.contributor.googleauthorYoo, I. K-
dc.contributor.googleauthorKang, B. S-
dc.contributor.googleauthorPark, Y. D-
dc.contributor.googleauthorLee, M. J-
dc.contributor.googleauthorPark, Y-
dc.relation.code2008200866-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E]-
dc.sector.departmentDEPARTMENT OF APPLIED PHYSICS-
dc.identifier.pidbosookang-
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