Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 강보수 | - |
dc.date.accessioned | 2018-11-09T06:03:58Z | - |
dc.date.available | 2018-11-09T06:03:58Z | - |
dc.date.issued | 2008-05 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v. 92, No. 20, Article no. 202112 | en_US |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://aip.scitation.org/doi/abs/10.1063/1.2936087 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/80297 | - |
dc.description.abstract | The behavior of unipolar resistance switching in NiO thin film was investigated. The switching current and the switching voltage alone did not follow statistical distribution. Instead, it was observed that product of switching current and switching voltage; namely, switching power follows Poisson's distribution. An electrical manipulation-pulse train, for example-was suggested in order to minimize switching failure based on the above Poisson's distribution behavior. (C) 2008 American Institute of Physics. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | AMER INST PHYSICS | en_US |
dc.subject | NONVOLATILE MEMORY | en_US |
dc.subject | DOPED SRTIO3 | en_US |
dc.subject | HIGH-DENSITY | en_US |
dc.title | Interpretation of nanoscale conducting paths and their control in nickel oxide (NiO) thin films | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.2936087 | - |
dc.relation.journal | APPLIED PHYSICS LETTERS | - |
dc.contributor.googleauthor | Yoo, I. K | - |
dc.contributor.googleauthor | Kang, B. S | - |
dc.contributor.googleauthor | Park, Y. D | - |
dc.contributor.googleauthor | Lee, M. J | - |
dc.contributor.googleauthor | Park, Y | - |
dc.relation.code | 2008200866 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E] | - |
dc.sector.department | DEPARTMENT OF APPLIED PHYSICS | - |
dc.identifier.pid | bosookang | - |
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