JOURNAL OF THE OPTICAL SOCIETY OF KOREA, v. 12, No. 1, Page. 49-51
Abstract
The wide-band spiral inductor to be monolithically integrated on the AlN substrate as a choking
inductor for a compact 10 Gb/s optical transmitter applications is investigated. In order to reduce
the parasitic capacitance limiting the choking bandwidth, the AlN substrate is partially etched
away, which is analyzed by using an equivalent circuit model. The measured S21 transmission
response of the fabricated inductor is suppressed as low as -10 dB in the frequency range of 5
to 16 GHz.