Improvement of the positive bias stability of a-IGZO TFTs by the HCN treatment
- Title
- Improvement of the positive bias stability of a-IGZO TFTs by the HCN treatment
- Author
- 최덕균
- Keywords
- HCN treatment; Amorphous IGZO; PBS instability
- Issue Date
- 2016-09
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Citation
- SOLID-STATE ELECTRONICS, v. 126, Page. 87-91
- Abstract
- In recent years, many researchers have attempted to improve the bias stability of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). In this study, the hydrogen cyanide (HCN) treatment was carried out to improve the positive bias stability of bottom-gate a-IGZO TFTs. The HCN treatment was performed using a 0.1 M HCN solution with a pH of 10 at room temperature. Before applying the positive bias stress, there were no differences in the major electrical properties, including the saturation mobility (mu(sat)), threshold voltage (V-th), and subthreshold swing (S/S), between HCN-treated and non-HCN-treated devices. However, after applying the positive bias stress, the HCN-treated device showed superior bias stability compared to the non-HCN-treated device. This difference is associated with the passivation of the defect states and the surface of the back-channel layer of the HCN-treated device by cyanide ions. (C) 2016 Published by Elsevier Ltd.
- URI
- https://www.sciencedirect.com/science/article/pii/S0038110116301411?via%3Dihubhttps://repository.hanyang.ac.kr/handle/20.500.11754/76823
- ISSN
- 0038-1101; 1879-2405
- DOI
- 10.1016/j.sse.2016.09.010
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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