Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 최덕균 | - |
dc.date.accessioned | 2018-10-29T06:02:08Z | - |
dc.date.available | 2018-10-29T06:02:08Z | - |
dc.date.issued | 2016-09 | - |
dc.identifier.citation | SOLID-STATE ELECTRONICS, v. 126, Page. 87-91 | en_US |
dc.identifier.issn | 0038-1101 | - |
dc.identifier.issn | 1879-2405 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0038110116301411?via%3Dihub | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/76823 | - |
dc.description.abstract | In recent years, many researchers have attempted to improve the bias stability of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). In this study, the hydrogen cyanide (HCN) treatment was carried out to improve the positive bias stability of bottom-gate a-IGZO TFTs. The HCN treatment was performed using a 0.1 M HCN solution with a pH of 10 at room temperature. Before applying the positive bias stress, there were no differences in the major electrical properties, including the saturation mobility (mu(sat)), threshold voltage (V-th), and subthreshold swing (S/S), between HCN-treated and non-HCN-treated devices. However, after applying the positive bias stress, the HCN-treated device showed superior bias stability compared to the non-HCN-treated device. This difference is associated with the passivation of the defect states and the surface of the back-channel layer of the HCN-treated device by cyanide ions. (C) 2016 Published by Elsevier Ltd. | en_US |
dc.description.sponsorship | This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (2013R1A1A2064715). | en_US |
dc.language.iso | en | en_US |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | en_US |
dc.subject | HCN treatment | en_US |
dc.subject | Amorphous IGZO | en_US |
dc.subject | PBS instability | en_US |
dc.title | Improvement of the positive bias stability of a-IGZO TFTs by the HCN treatment | en_US |
dc.type | Article | en_US |
dc.relation.volume | 126 | - |
dc.identifier.doi | 10.1016/j.sse.2016.09.010 | - |
dc.relation.page | 87-91 | - |
dc.relation.journal | SOLID-STATE ELECTRONICS | - |
dc.contributor.googleauthor | Kim, Myeong-Ho | - |
dc.contributor.googleauthor | Choi, Myung-Jea | - |
dc.contributor.googleauthor | Kimura, Katsuya | - |
dc.contributor.googleauthor | Kobayashi, Hikaru | - |
dc.contributor.googleauthor | Choi, Duck-Kyun | - |
dc.relation.code | 2016000734 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | duck | - |
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