Fermi-level unpinning in Pt/Al2O3/GaSb PMOS capacitors by sulphurization and rapid thermal annealing of GaSb surfaces
- Title
- Fermi-level unpinning in Pt/Al2O3/GaSb PMOS capacitors by sulphurization and rapid thermal annealing of GaSb surfaces
- Author
- 정재경
- Keywords
- GERMANIUM OXIDE SYSTEMS; LAYER-DEPOSITED AL2O3; ELECTRICAL CHARACTERISTICS; PHASE-EQUILIBRIA
- Issue Date
- 2016-08
- Publisher
- AMER INST PHYSICS
- Citation
- APPLIED PHYSICS LETTERS, v. 109, NO. 7, Page. 72104-72104
- Abstract
- A facile route to mitigate the Fermi-level pinning between a p-type GaSb semiconductor and an Al2O3 dielectric is proposed. Combination of the sulphurization of the GaSb surface and the subsequent rapid thermal annealing allowed for high quality GaSb/Al2O3 interfacial characteristics; the interfacial trap density value was <= 2.0 x 10(12) cm(-2) eV(-1) in an energy range of 0.05 <= E-T - E-v <= 0.45 eV for the PMOS capacitor via rapid thermal annealing at 575 degrees C. A physical rationale was given on the basis of the thermo-chemical conversion of Ga2O into Ga2O3 and the conformal elimination of Sb related elements and oxides on the GaSb surface. Published by AIP Publishing.
- URI
- https://aip.scitation.org/doi/10.1063/1.4961492https://repository.hanyang.ac.kr/handle/20.500.11754/76177
- ISSN
- 0003-6951; 1077-3118
- DOI
- 10.1063/1.4961492
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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