Optimization of the p(+)-ZnTe layer for back contacts of ZnTe thin-film solar cells
- Title
- Optimization of the p(+)-ZnTe layer for back contacts of ZnTe thin-film solar cells
- Author
- 김은규
- Keywords
- Pulsed laser deposition; ZnTe solar cell; p-GaAs substrate
- Issue Date
- 2016-08
- Publisher
- KOREAN PHYSICAL SOC
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 69, NO. 3, Page. 416-420
- Abstract
- We have studied the performance of ZnTe-based heterojunction diodes grown on p-GaAs substrates by using pulsed laser deposition (PLD). In the X-ray diffraction measurements, ZnTe and CdS thin films grown on p-GaAs (100) substrates appeared to have a cubic crystalline structure while the ZnO film showed a hexagonal structure. The structure of n(+)-ZnO/i-ZnTe/p-GaAs with insertion of a CdS buffer layer between n(+)-ZnO and i-ZnTe showed strong rectifying diode characteristics, and its open-circuit voltage (V (oc) ) and short-circuit current density (J (sc) ) under 1,000 Wm(-2) air mass 1.5 global (AM 1.5G) illumination were measured about 0.32 V and 0.61 mAcm(-2), respectively. When an inserted another layer, a ZnTe:Cu layer, as a p(+)-layer for the contacts on p-GaAs substrate, the value of V (oc) and J (sc) of the n(+)-ZnO/CdS/i-ZnTe/ZnTe:Cu/p-GaAs structure increased to 0.39 V and 0.81 mA/cm2, respectively. As the thickness of i-ZnTe were increased from 210 to 420 nm, the photoelectric conversion efficiency of the n(+)-ZnO/CdS/i-ZnTe/ZnTe:Cu/p-GaAs structure increased to 0.24%.
- URI
- https://link.springer.com/article/10.3938%2Fjkps.69.416https://repository.hanyang.ac.kr/handle/20.500.11754/76174
- ISSN
- 0374-4884; 1976-8524
- DOI
- 10.3938/jkps.69.416
- Appears in Collections:
- COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > PHYSICS(물리학과) > Articles
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