Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김은규 | - |
dc.date.accessioned | 2018-09-27T02:38:20Z | - |
dc.date.available | 2018-09-27T02:38:20Z | - |
dc.date.issued | 2016-08 | - |
dc.identifier.citation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 69, NO. 3, Page. 416-420 | en_US |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.issn | 1976-8524 | - |
dc.identifier.uri | https://link.springer.com/article/10.3938%2Fjkps.69.416 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/76174 | - |
dc.description.abstract | We have studied the performance of ZnTe-based heterojunction diodes grown on p-GaAs substrates by using pulsed laser deposition (PLD). In the X-ray diffraction measurements, ZnTe and CdS thin films grown on p-GaAs (100) substrates appeared to have a cubic crystalline structure while the ZnO film showed a hexagonal structure. The structure of n(+)-ZnO/i-ZnTe/p-GaAs with insertion of a CdS buffer layer between n(+)-ZnO and i-ZnTe showed strong rectifying diode characteristics, and its open-circuit voltage (V (oc) ) and short-circuit current density (J (sc) ) under 1,000 Wm(-2) air mass 1.5 global (AM 1.5G) illumination were measured about 0.32 V and 0.61 mAcm(-2), respectively. When an inserted another layer, a ZnTe:Cu layer, as a p(+)-layer for the contacts on p-GaAs substrate, the value of V (oc) and J (sc) of the n(+)-ZnO/CdS/i-ZnTe/ZnTe:Cu/p-GaAs structure increased to 0.39 V and 0.81 mA/cm2, respectively. As the thickness of i-ZnTe were increased from 210 to 420 nm, the photoelectric conversion efficiency of the n(+)-ZnO/CdS/i-ZnTe/ZnTe:Cu/p-GaAs structure increased to 0.24%. | en_US |
dc.description.sponsorship | This work was supported in part by a New and Renewable Energy Program of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korean government (MOTIE) (No. 2013010010120) and by the National Research Foundation of Korea (NRF) grant funded by the Korea government's Ministry of Science, ICT and Future Planning (MSIP) (NRF-2014R1A2A1A11053936). | en_US |
dc.language.iso | en | en_US |
dc.publisher | KOREAN PHYSICAL SOC | en_US |
dc.subject | Pulsed laser deposition | en_US |
dc.subject | ZnTe solar cell | en_US |
dc.subject | p-GaAs substrate | en_US |
dc.title | Optimization of the p(+)-ZnTe layer for back contacts of ZnTe thin-film solar cells | en_US |
dc.type | Article | en_US |
dc.relation.no | 3 | - |
dc.relation.volume | 69 | - |
dc.identifier.doi | 10.3938/jkps.69.416 | - |
dc.relation.page | 416-420 | - |
dc.relation.journal | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.contributor.googleauthor | Lee, Kyoung Su | - |
dc.contributor.googleauthor | Oh, Gyujin | - |
dc.contributor.googleauthor | Kim, Eun Kyu | - |
dc.relation.code | 2016000430 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF NATURAL SCIENCES[S] | - |
dc.sector.department | DEPARTMENT OF PHYSICS | - |
dc.identifier.pid | ek-kim | - |
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