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CdS buffer-layer free highly efficient ZnO-CdSe photoelectrochemical cells
- Title
- CdS buffer-layer free highly efficient ZnO-CdSe photoelectrochemical cells
- Author
- 한성환
- Issue Date
- 2012-07
- Publisher
- American Institute of Physics
- Citation
- Applied Physics Letters, 2012, 101(3), 033906
- Abstract
- Highly reproducible, wet-chemically processed, CdS buffer-layer free ZnO-CdSe photoelectrochemical cells with 3.38% power conversion efficiency have been fabricated. An enhanced current density is observed due to increase in number of injected photoelectrons with CdSe nanoparticles loading time. Impedance spectroscopy results suggest that interfacial resistance is strongly dependant on CdSe nanoparticles loading time.
- URI
- https://aip.scitation.org/doi/10.1063/1.4737865https://repository.hanyang.ac.kr/handle/20.500.11754/73032
- ISSN
- 0003-6951; 1077-3118
- Appears in Collections:
- COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > CHEMISTRY(화학과) > Articles
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