Effect of mechanical stress on the stability of flexible InGaZnO thin-film transistors
- Title
- Effect of mechanical stress on the stability of flexible InGaZnO thin-film transistors
- Author
- 오새룬터
- Keywords
- Mechanical stress; a-IGZO thin-film transistor; polyimide substrate; device degradation
- Issue Date
- 2017-06
- Publisher
- Taylor & Francis
- Citation
- Journal of Information Display, v. 18, No. 2, Page. 87-91
- Abstract
- Demonstrated herein is the effect of mechanical stress on the device performance and stability of amorphous indium–gallium–zinc oxide thin-film transistors (TFTs) on a flexible polyimide substrate. Flexible TFTs were placed on jigs with various bending radii to apply different degrees of mechanical strain on them. When the tensile strain on the TFTs was increased from 0.19% to 0.93%, the threshold voltage shifted after a 10,000 s increase in bias–temperature–stress (BTS), under vacuum conditions. The BTS instability was further exacerbated when the device was exposed to the air ambient at a 0.93% strain. The device reliability deteriorated due to the increase in the subgap density of states as well as the enhanced ambient effects via the strain-induced gas permeation paths.
- URI
- https://www.tandfonline.com/doi/abs/10.1080/15980316.2017.1294116https://repository.hanyang.ac.kr/handle/20.500.11754/72193
- ISSN
- 1598-0316
- DOI
- 10.1080/15980316.2017.1294116
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > ELECTRICAL ENGINEERING(전자공학부) > Articles
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML