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dc.contributor.author오혜근-
dc.date.accessioned2018-05-29T07:44:18Z-
dc.date.available2018-05-29T07:44:18Z-
dc.date.issued2017-01-
dc.identifier.citationMICROELECTRONIC ENGINEERING, v. 177, Page. 35-40en_US
dc.identifier.issn0167-9317-
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S0167931717300400-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/71662-
dc.description.abstractTo solve the defect problem during the exposure process of EUV lithography (EUVL), an EUV pellicle is suggested as a solution. Even though use of an EUV pellicle is considered an essential solution for defect control during the exposure process, it is not ready for application in real commercial processes due to how difficult it is to manufacture. Due to tight requirements for an EUV pellicle, flawless fabrication is impossible and deformations such as a wrinkle would result in serious patterning problems. These deformations lead to critical dimension (CD) non uniformity due to the non-uniform transmission distribution caused by a pellicle wrinkle. In this paper, we discuss the impact of transmission non-uniformity caused by a wrinkled pellicle. When we treat the effects of a wrinkled pellicle, we considered off-axis-illumination, which is a promising resolution enhancement technology. By shrinking the target pattern size down to 7 nm nodes (N7) or 5 nm nodes (N5), a flexible illumination system is required to enhance the resolution ability. With dipole illuminations, resolution is varied by partial coherence and by not only the beam size at the pellicle, but also by the incident angle distribution. For these reasons, a non-uniform intensity distribution caused by a wrinkled pellide is modified with changes in off-axis illumination conditions, including spatial coherence and the aperture shape. For N5 patterning, the CD non-uniformity of 0.2 nm occurs at 1.7% transmission variation (2-pass). However, the intensity distribution is varied under various illumination conditions in spite of the same pellicle conditions. The intensity non-uniformity goes up with increasing spatial coherence. Even though feature conditions of the wrinkled pellicle are the same, the transmission non uniformity is changed with illumination conditions. Thus, the allowable feature conditions of the wrinkled pellicle may be changed. For achieving good CD uniformity, the allowable limit of the pellicle wrinkle is carefully studied because the impact of the wrinkled pellicle varies with the illumination conditions. (C) 2017 Elsevier B.V. All rights reserved.en_US
dc.description.sponsorshipThis research was supported partly by Samsung electronics mask development team and partly by the Nano Material Technology Development Program through the National Research Foundation of Korea (NRF), and is funded by the Ministry of Education, Science and Technology (No. 2015M3A7B7045353).en_US
dc.language.isoen_USen_US
dc.publisherELSEVIER SCIENCE BVen_US
dc.subjectCD uniformityen_US
dc.subjectEUV lithographyen_US
dc.subjectEUV pellideen_US
dc.subjectPellicleen_US
dc.subjectPellicle deformationen_US
dc.subjectTransmission non-uniformityen_US
dc.titleImpact of transmission non-uniformity of a wrinkled EUV pellicle for N5 patterning under various illuminationsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.mee.2017.01.031-
dc.relation.page35-40-
dc.relation.journalMICROELECTRONIC ENGINEERING-
dc.contributor.googleauthorKim, IS-
dc.contributor.googleauthorKim, GJ-
dc.contributor.googleauthorYeung, M-
dc.contributor.googleauthorBarouch, E-
dc.contributor.googleauthorOh, HK-
dc.relation.code2017001998-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E]-
dc.sector.departmentDEPARTMENT OF APPLIED PHYSICS-
dc.identifier.pidhyekeun-
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COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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