Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 정희준 | - |
dc.date.accessioned | 2018-04-18T23:49:57Z | - |
dc.date.available | 2018-04-18T23:49:57Z | - |
dc.date.issued | 2016-09 | - |
dc.identifier.citation | SCIENTIFIC REPORTS, v. 6, Article no. 33967 | en_US |
dc.identifier.issn | 2045-2322 | - |
dc.identifier.uri | https://www.nature.com/articles/srep33967 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/69312 | - |
dc.description.abstract | The origin of negative differential resistance (NDR) and its derivative intermediate resistive states (IRSs) of nanocomposite memory systems have not been clearly analyzed for the past decade. To address this issue, we investigate the current fluctuations of organic nanocomposite memory devices with NDR and the IRSs under various temperature conditions. The 1/f noise scaling behaviors at various temperature conditions in the IRSs and telegraphic noise in NDR indicate the localized current pathways in the organic nanocomposite layers for each IRS. The clearly observed telegraphic noise with a long characteristic time in NDR at low temperature indicates that the localized current pathways for the IRSs are attributed to trapping/de-trapping at the deep trap levels in NDR. This study will be useful for the development and tuning of multi-bit storable organic nanocomposite memory device systems. | en_US |
dc.description.sponsorship | The authors appreciate the financial support of the National Creative Research Laboratory program (Grant No. 2012026372) through the National Research Foundation of Korea (NRF), funded by the Korean Ministry of Science, ICT & Future Planning. G. H. A. and A. J. acknowledge the Electronic Materials Program, funded by the Director, Office of Science, Office of Basic Energy Sciences, Material Sciences and Engineering Division of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. T. L. appreciates the financial support from LG Yonam Foundation. | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | NATURE PUBLISHING GROUP | en_US |
dc.subject | RESISTIVE MEMORY | en_US |
dc.subject | 1/F NOISE | en_US |
dc.subject | DIFFUSION NOISE | en_US |
dc.subject | INTEGRATION | en_US |
dc.subject | MECHANISM | en_US |
dc.subject | ELEMENTS | en_US |
dc.subject | CELL | en_US |
dc.title | Origin of multi-level switching and telegraphic noise in organic nanocomposite memory devices | en_US |
dc.type | Article | en_US |
dc.relation.volume | 6 | - |
dc.identifier.doi | 10.1038/srep33967 | - |
dc.relation.page | 33967-33975 | - |
dc.relation.journal | SCIENTIFIC REPORTS | - |
dc.contributor.googleauthor | Song, Y | - |
dc.contributor.googleauthor | Jeong, H | - |
dc.contributor.googleauthor | Chung, S | - |
dc.contributor.googleauthor | Ahn, GH | - |
dc.contributor.googleauthor | Kim, TY | - |
dc.contributor.googleauthor | Jang, J | - |
dc.contributor.googleauthor | Yoo, D | - |
dc.contributor.googleauthor | Jeong, H | - |
dc.contributor.googleauthor | Javey, A | - |
dc.contributor.googleauthor | Lee, T | - |
dc.relation.code | 2016012537 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E] | - |
dc.sector.department | DEPARTMENT OF APPLIED PHYSICS | - |
dc.identifier.pid | hjeong | - |
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