원자층 증착법을 이용한 이황화 주석의 박막 특성

Abstract

Tin disulfide (SnS2) has been attracting attention as a two-dimensional (2D) material. High quality and low temperature process of 2D materials are required for future electronic devices. Here, we investigated few-layer tin disulfide (SnS2) deposited by atomic layer deposition (ALD) using tetrakis(dimethylamino)tin (TDMASn) as a Sn precursor and H2S gas as a sulfur source at low temperature (150°C). The crystallinity of SnS2 was improved by H2S gas annealing. We carried out H2S gas annealing at various conditions (250°C, 300°C, 350°C and three-step method). The SnS2 annealed with H2S gas show hexagonal structure measured by X-ray diffraction (XRD) and clearly out-of-plane (A1g) mode in Raman spectroscopy. The crystallinity of SnS2 was improved after H2S annealing and confirmed by a XRD full-width at half-maximum (FWHM) value. Angle-resolved X-ray photoelectron spectroscopy (ARXPS) results revealed the chemical state of SnS2 and high-resolution transmission electron microscopy (HR-TEM) images indicated a clear layered structure.