Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | 전형탁 | - |
dc.contributor.author | 이승진 | - |
dc.date.accessioned | 2018-04-18T06:07:16Z | - |
dc.date.available | 2018-04-18T06:07:16Z | - |
dc.date.issued | 2018-02 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/68242 | - |
dc.identifier.uri | http://hanyang.dcollection.net/common/orgView/200000432735 | en_US |
dc.description.abstract | Tin disulfide (SnS2) has been attracting attention as a two-dimensional (2D) material. High quality and low temperature process of 2D materials are required for future electronic devices. Here, we investigated few-layer tin disulfide (SnS2) deposited by atomic layer deposition (ALD) using tetrakis(dimethylamino)tin (TDMASn) as a Sn precursor and H2S gas as a sulfur source at low temperature (150°C). The crystallinity of SnS2 was improved by H2S gas annealing. We carried out H2S gas annealing at various conditions (250°C, 300°C, 350°C and three-step method). The SnS2 annealed with H2S gas show hexagonal structure measured by X-ray diffraction (XRD) and clearly out-of-plane (A1g) mode in Raman spectroscopy. The crystallinity of SnS2 was improved after H2S annealing and confirmed by a XRD full-width at half-maximum (FWHM) value. Angle-resolved X-ray photoelectron spectroscopy (ARXPS) results revealed the chemical state of SnS2 and high-resolution transmission electron microscopy (HR-TEM) images indicated a clear layered structure. | - |
dc.publisher | 한양대학교 | - |
dc.title | 원자층 증착법을 이용한 이황화 주석의 박막 특성 | - |
dc.title.alternative | Characteristic of few-layer tin disulfide deposited by atomic layer deposition | - |
dc.type | Theses | - |
dc.contributor.googleauthor | 이승진 | - |
dc.sector.campus | S | - |
dc.sector.daehak | 대학원 | - |
dc.sector.department | 신소재공학과 | - |
dc.description.degree | Master | - |
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