Surface Polarity Effects on the Hydride Vapor Phase Epitaxial Growth of GaN on 6H-SiC with a Chrome Nitride Buffer Layer
- Title
- Surface Polarity Effects on the Hydride Vapor Phase Epitaxial Growth of GaN on 6H-SiC with a Chrome Nitride Buffer Layer
- Author
- 박진섭
- Keywords
- SUBSTRATE; POROSITY
- Issue Date
- 2012-03
- Publisher
- Electrochemical SOC INC
- Citation
- Electrochemical and Solid-State Letters, 2012, 15(5), P.H148-H152
- Abstract
- A CrN buffer layer was introduced to 6H-SiC substrate to aid the subsequent hydride vapor phase epitaxial growth of GaN. Crystallinities of GaN layers grown on both Si- and C-terminated surfaces of 6H-SiC wafers with and without CrN layers were compared. On Si-terminated SiC, CrN formed with a trigonal morphology, indicating a good crystallographic relationship with growth along the < 111 > axis. CrN formed randomly on C-terminated SiC, leading to the subsequent GaN growth occurring with no preferred orientation, suggesting deteriorated crystallinity. High-quality GaN layers were grown on the CrN buffered Si-terminated SiC. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.014205esl] All rights reserved.
- URI
- http://esl.ecsdl.org/content/15/5/H148http://hdl.handle.net/20.500.11754/67828
- ISSN
- 1099-0062
- DOI
- 10.1149/2.014205esl
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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