Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진섭 | - |
dc.date.accessioned | 2018-04-16T04:20:52Z | - |
dc.date.available | 2018-04-16T04:20:52Z | - |
dc.date.issued | 2012-03 | - |
dc.identifier.citation | Electrochemical and Solid-State Letters, 2012, 15(5), P.H148-H152 | en_US |
dc.identifier.issn | 1099-0062 | - |
dc.identifier.uri | http://esl.ecsdl.org/content/15/5/H148 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/67828 | - |
dc.description.abstract | A CrN buffer layer was introduced to 6H-SiC substrate to aid the subsequent hydride vapor phase epitaxial growth of GaN. Crystallinities of GaN layers grown on both Si- and C-terminated surfaces of 6H-SiC wafers with and without CrN layers were compared. On Si-terminated SiC, CrN formed with a trigonal morphology, indicating a good crystallographic relationship with growth along the < 111 > axis. CrN formed randomly on C-terminated SiC, leading to the subsequent GaN growth occurring with no preferred orientation, suggesting deteriorated crystallinity. High-quality GaN layers were grown on the CrN buffered Si-terminated SiC. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.014205esl] All rights reserved. | en_US |
dc.description.sponsorship | This work was partly supported by the IT R&D program of MKE/KEIT [10039216, Development of low droop 4,500 mW high power (10 W operation) LED chip for solid state lighting] and Basic Science Research Program of the National Research Foundation of Korea [Project No.: 2011-0029443]. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Electrochemical SOC INC | en_US |
dc.subject | SUBSTRATE | en_US |
dc.subject | POROSITY | en_US |
dc.title | Surface Polarity Effects on the Hydride Vapor Phase Epitaxial Growth of GaN on 6H-SiC with a Chrome Nitride Buffer Layer | en_US |
dc.type | Article | en_US |
dc.relation.no | 5 | - |
dc.relation.volume | 15 | - |
dc.identifier.doi | 10.1149/2.014205esl | - |
dc.relation.page | 148-152 | - |
dc.relation.journal | ELECTROCHEMICAL AND SOLID STATE LETTERS | - |
dc.contributor.googleauthor | Park, J. | - |
dc.contributor.googleauthor | Lee, H.-J. | - |
dc.contributor.googleauthor | Lee, S.W. | - |
dc.contributor.googleauthor | Ha, J.-S. | - |
dc.contributor.googleauthor | Nagata, S. | - |
dc.contributor.googleauthor | Hong, S.-K. | - |
dc.contributor.googleauthor | Lee, H.Y. | - |
dc.contributor.googleauthor | Cho, M.W. | - |
dc.contributor.googleauthor | Yao, T. | - |
dc.relation.code | 2012202779 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | jinsubpark | - |
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