Synthesis and characterization of NiO-doped p-type AZO films fabricated by sol-gel method
- Title
- Synthesis and characterization of NiO-doped p-type AZO films fabricated by sol-gel method
- Author
- Kwan-San Hui
- Keywords
- Al-doped ZnO; NiO; Sol-gel method; p-type; Transparent conducting oxide
- Issue Date
- 2012-07
- Publisher
- Elsevier Science B.V., Amsterdam.
- Citation
- Materials letters, 2012, 68, P.283-286
- Abstract
- NiO-doped p-type AZO (Al/Zn = 1.5 at.%) films were synthesized on glass substrates using a simple and low cost sol-gel solution method, p-type conductivity could be achieved by annealing the NiO:AZO films in N2/1-12 forming gas at 550 degrees C. The real Al/Zn and Ni/Zn ratio, hole concentration, hole mobility and resistivity of the 1.5-2 mol% NiO-doped AZO films were 0.26-0.29, 0.06-0.09, 3.15 x 10(18)-2.18 x 10(20) cm(-3), 2.33-12.76 cm(2)/Vs, and 2.39 x 10(-1)-1.24 x 10(-2) Omega cm, respectively. I-V measurements of the p-n junction (ITO/NiO:AZO) revealed rectifying I-V characteristics, confirming that these NiO:AZO films exhibit p-type conductivity. This study opens the possibility of developing highly conductive p-type composite transparent conducting oxides for optoelectronic devices. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved.
- URI
- https://www.sciencedirect.com/science/article/pii/S0167577X11012559?via%3Dihubhttp://hdl.handle.net/20.500.11754/66381
- ISSN
- 0167-577X
- DOI
- 10.1016/j.matlet.2011.10.089
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MECHANICAL ENGINEERING(기계공학부) > Articles
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