Synthesis and characterization of NiO-doped p-type AZO films fabricated by sol-gel method

Abstract

NiO-doped p-type AZO (Al/Zn = 1.5 at.%) films were synthesized on glass substrates using a simple and low cost sol-gel solution method, p-type conductivity could be achieved by annealing the NiO:AZO films in N2/1-12 forming gas at 550 degrees C. The real Al/Zn and Ni/Zn ratio, hole concentration, hole mobility and resistivity of the 1.5-2 mol% NiO-doped AZO films were 0.26-0.29, 0.06-0.09, 3.15 x 10(18)-2.18 x 10(20) cm(-3), 2.33-12.76 cm(2)/Vs, and 2.39 x 10(-1)-1.24 x 10(-2) Omega cm, respectively. I-V measurements of the p-n junction (ITO/NiO:AZO) revealed rectifying I-V characteristics, confirming that these NiO:AZO films exhibit p-type conductivity. This study opens the possibility of developing highly conductive p-type composite transparent conducting oxides for optoelectronic devices. Crown Copyright (C) 2011 Published by Elsevier B.V. All rights reserved.