플래시 메모리 칩의 잔류응력 제거를 위한 IPL 어닐링
- Title
- 플래시 메모리 칩의 잔류응력 제거를 위한 IPL 어닐링
- Other Titles
- Intense pulsed light annealing to reduce the residual stress in ultra-thin flash memory chip
- Author
- 김학성
- Keywords
- 파괴강도; 라만 스펙트로스코피; 잔류응력; IPL 어닐링; Fracture strength; IPL annealing; Raman spectroscopy; Residual stress
- Issue Date
- 2012-11
- Publisher
- 대한기계학회 / The Korean Society of Mechanical Engineers
- Citation
- 대한기계학회 춘추학술대회, 2012, 2012(11), P.371-375, 5P.
- Abstract
- Recently, ultra-thin chips with thicknesses of under 35 ㎛ have emerged as an option for thinner, high performance electronic devices. For reliable electronic devices and high throughput packaging processes, the mechanical properties of ultra-thin chips need to be accurately understood. Especially, the residual stress occurred due to shear force between the grinding wheel/ polish pad in wafer thinning process occurred in wafer thinning process could be affected the fracture strength of ultra-thin device. In this paper, the optimal condition to reduce the residual stress of the ultra-thin chip was found with respect to the various wafer thinning parameters. The residual stresses distributions along the thickness direction of the ultra-thin flash memory chip before/after IPL annealing were measured using Raman spectroscopy. To validate the IPL annealing, we perform the BOR test to measure the fracture strength of ultra-thin flash memory chip. From the study, the effect of the residual stress and the fracture strength of ultra-thin flash memory chip with respect to IPL annealing were discussed.
- URI
- http://www.dbpia.co.kr/Article/NODE02111616http://hdl.handle.net/20.500.11754/54214
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MECHANICAL ENGINEERING(기계공학부) > Articles
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