Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김학성 | - |
dc.date.accessioned | 2018-03-30T04:11:19Z | - |
dc.date.available | 2018-03-30T04:11:19Z | - |
dc.date.issued | 2012-11 | - |
dc.identifier.citation | 대한기계학회 춘추학술대회, 2012, 2012(11), P.371-375, 5P. | en_US |
dc.identifier.uri | http://www.dbpia.co.kr/Article/NODE02111616 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/54214 | - |
dc.description.abstract | Recently, ultra-thin chips with thicknesses of under 35 ㎛ have emerged as an option for thinner, high performance electronic devices. For reliable electronic devices and high throughput packaging processes, the mechanical properties of ultra-thin chips need to be accurately understood. Especially, the residual stress occurred due to shear force between the grinding wheel/ polish pad in wafer thinning process occurred in wafer thinning process could be affected the fracture strength of ultra-thin device. In this paper, the optimal condition to reduce the residual stress of the ultra-thin chip was found with respect to the various wafer thinning parameters. The residual stresses distributions along the thickness direction of the ultra-thin flash memory chip before/after IPL annealing were measured using Raman spectroscopy. To validate the IPL annealing, we perform the BOR test to measure the fracture strength of ultra-thin flash memory chip. From the study, the effect of the residual stress and the fracture strength of ultra-thin flash memory chip with respect to IPL annealing were discussed. | en_US |
dc.description.sponsorship | 이 연구는 2012 년 정부 (지식경제부)의 재원으로 정부 R&D 사업(PID: 10041083)과 삼성전자의 지원을 받아 수행하였습니다. | en_US |
dc.language.iso | ko_KR | en_US |
dc.publisher | 대한기계학회 / The Korean Society of Mechanical Engineers | en_US |
dc.subject | 파괴강도 | en_US |
dc.subject | 라만 스펙트로스코피 | en_US |
dc.subject | 잔류응력 | en_US |
dc.subject | IPL 어닐링 | en_US |
dc.subject | Fracture strength | en_US |
dc.subject | IPL annealing | en_US |
dc.subject | Raman spectroscopy | en_US |
dc.subject | Residual stress | en_US |
dc.title | 플래시 메모리 칩의 잔류응력 제거를 위한 IPL 어닐링 | en_US |
dc.title.alternative | Intense pulsed light annealing to reduce the residual stress in ultra-thin flash memory chip | en_US |
dc.type | Article | en_US |
dc.relation.page | 1-5 | - |
dc.contributor.googleauthor | 전은범 | - |
dc.contributor.googleauthor | 김학성 | - |
dc.contributor.googleauthor | Jeon, Eun-Beom | - |
dc.contributor.googleauthor | Kim, Hak-Sung | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MECHANICAL ENGINEERING | - |
dc.identifier.pid | kima | - |
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