2021-04 | Effect of annealing temperature on switching properties in Si-doped HfO2 films | 강보수 |
2006-12 | Effect of conductive LaNiO3 electrode on the structural and ferroelectric properties of Bi3.25La0.75Ti3O12 films | 강보수 |
2020-05 | Effect of wake-up on the polarization switching dynamics of Si doped HfO2 thin films with imprint | 강보수 |
2007-06 | Effective thickness and dielectric constant of interfacial layers of Pt∕Bi 3.15 Nd 0.85 Ti 3 O 12 ∕SrRuO 3 capacitors | 강보수 |
2008-08 | Effects of metal electrodes on the resistive memory switching property of NiO thin films | 강보수 |
2015-06 | Effects of NH3 flow rate on the epitaxial growth of CoSi2 thin film using a CoN (x) interlayer deposited by MOCVD | 강보수 |
2019-04 | Effects of Pb content and electrode materials on the ferroelectric properties of Pb(Zr0.52Ti0.48)O-3 thin films | 강보수 |
2019-04 | Effects of repetitive polarization switching on the coercive voltage of Pt/Pb(Zr0.52Ti0.48 )O-3/Pt thin films analyzed using impedance spectroscopy | 강보수 |
2015-03 | Effects of the fluctuation in a singly-connected conducting filament structure on the distribution of the reset parameters in unipolar resistance switching | 강보수 |
2009-03 | Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory | 강보수 |
2007-08 | Electromigration effect of Ni electrodes on the resistive switching characteristics of NiO thin films | 강보수 |
2005-02 | Ferromagnetic properties of epitaxial SrRuO3 films on SiO2/Si using biaxially oriented MgO as templates | 강보수 |
2013-09 | Forming process of unipolar resistance switching in Ta2O5-x thin films | 강보수 |
2008-08 | High-current-density CuOx/InZnOx thin-film diode for cross-point memory applications | 강보수 |
2024-05 | Highly reliable bipolar resistive switching of tantalum oxide-based memory using Al2O3 diffusion barrier layers | 강보수 |
2020-04 | Highly stable, solution-processed quaternary oxide thin film-based resistive switching random access memory devices via global and local stoichiometric manipulation strategy | 강보수 |
2002-09 | Hydrogen-induced degradation in ferroelectric Bi3.25La0.75Ti3O12 | 강보수 |
2002-11 | Hydrogen-induced degradation mechanisms in ferroelectric (Bi,La)4Ti3O12 and Pb(Zr,Ti)O3 thin films | 강보수 |
2008-05 | Interpretation of nanoscale conducting paths and their control in nickel oxide (NiO) thin films | 강보수 |
2020-03 | J/psi and psi(2S) production at forward rapidity in p plus p collisions at root s=510 GeV | 강보수 |
1999-10 | Lanthanum-substituted bismuth titanate for use in non-volatile memories | 강보수 |
2006-05 | Low field magneto-transport properties of (La0.7Sr0.3MnO3)0.5:(ZnO)0.5 nanocomposite films | 강보수 |
2009-05 | Low-temperature-grown transition metal oxide based storage materials and oxide transistors for high-density non-volatile memory | 강보수 |
2002-07 | Mechanism of low temperature hydrogen-annealing-induced degradation in Pb(Zr0.4Ti0.6)O3 capacitors | 강보수 |
2023-07 | Mechanism of the Wake-Up and the Split-Up in AlOx/Hf0.5Zr0.5Ox Film | 강보수 |
2003-03 | Mechanisms for retention loss in ferroelectric Pt/Pb(Zr0.4Ti0.6)O3/Pt capacitors | 강보수 |
2008-03 | Mobility enhanced photoactivity in sol-gel grown epitaxial anatase TiO2 Films | 강보수 |
2019-03 | Negative capacitance phenomena depending on the wake-up effect in the ferroelectric Si:HfO2 film | 강보수 |
2023-12-27 | Optimization Method for Conductance Modulation in Ferroelectric Transistor for Neuromorphic Computing | 강보수 |
2015-06 | Phase transition phenomenon: A compound measure analysis | 강보수 |