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Effects of NH3 flow rate on the epitaxial growth of CoSi2 thin film using a CoN (x) interlayer deposited by MOCVD

Title
Effects of NH3 flow rate on the epitaxial growth of CoSi2 thin film using a CoN (x) interlayer deposited by MOCVD
Author
강보수
Keywords
CHEMICAL-VAPOR-DEPOSITION; OXIDE-MEDIATED EPITAXY; REACTIVE DEPOSITION; SI(100) SUBSTRATE; SILICON; COBALT; SILICIDATION; STABILITY; SI(001); LAYER
Issue Date
2015-06
Publisher
SPRINGER
Citation
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, v. 119, No. 4, Page. 1437-1441
Abstract
A uniform epitaxial CoSi2 layer could be grown on a Si(100) substrate by deposition of a CoN (x) interlayer followed by an in situ annealing process. The amorphous Si-N layer which is formed at the CoN (x) /Si interface plays a role in inhibiting excessive Co incorporation into Si layer and consequently enhancing the epitaxial growth of CoSi2 layer. However, the Si-N layer also limits the growth of thick CoSi2 layer. Therefore, the thickness of the amorphous Si-N layer is an important factor for the epitaxial growth of the CoSi2 layer with uniform structure and low sheet resistance.
URI
https://link.springer.com/article/10.1007/s00339-015-9117-0http://hdl.handle.net/20.500.11754/36217
ISSN
0947-8396; 1432-0630
DOI
10.1007/s00339-015-9117-0
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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