Enhancement of the power efficiency for p-i-n OLEDs containing organic p-type HAT-CN and n-type LCV materials
- Title
- Enhancement of the power efficiency for p-i-n OLEDs containing organic p-type HAT-CN and n-type LCV materials
- Author
- 김태환
- Keywords
- Organic n-type materials; Low operating voltage; High power efficiency
- Issue Date
- 2014-02
- Publisher
- Elsevier Science B.V., Amsterdam.
- Citation
- ORGANIC ELECTRONICS, Vol.15 No.2 [2014], pp. 343-347
- Abstract
- The p-i-n organic light-emitting devices (OLEDs) with a low turn-on voltage and a high power efficiency were fabricated by organic p-type 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN) layer and organic n-type 4,4',4 ' '-methylidynetris (N,N-dimethylaniline) (LCV) materials. The lowest operating voltage of the electron-only devices with a 2.5-wt.% LCV-doped BPhen layer was 4.02V. The highest values of the current density and the luminance of the p-i-n OLEDs were 429.8mA/cm 2 at 7.0V and 10,950cd/m 2 at 6.8V, respectively. The turn-on voltage and the power efficiency of the p-i-n OLEDs with a HAT-CN layer and a LCV-doped BPhen ETL were 2.46V and 2.76lm/W, respectively. The enhancement of the power efficiency and the decrease in the turn-on voltage of the p-i-n OLEDs were attributed to the improvement of the hole and electron injections due to the utilization of the p-type HAT-CN and the n-type LCV-doped BPhen layers.
- URI
- http://www.sciencedirect.com/science/article/pii/S1566119913005107?via%3Dihubhttp://hdl.handle.net/20.500.11754/51837
- ISSN
- 1566-1199
- DOI
- 10.1016/j.orgel.2013.11.023
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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