Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 김태환 | - |
dc.date.accessioned | 2018-03-24T06:05:54Z | - |
dc.date.available | 2018-03-24T06:05:54Z | - |
dc.date.issued | 2014-02 | - |
dc.identifier.citation | ORGANIC ELECTRONICS, Vol.15 No.2 [2014], pp. 343-347 | en_US |
dc.identifier.issn | 1566-1199 | - |
dc.identifier.uri | http://www.sciencedirect.com/science/article/pii/S1566119913005107?via%3Dihub | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/51837 | - |
dc.description.abstract | The p-i-n organic light-emitting devices (OLEDs) with a low turn-on voltage and a high power efficiency were fabricated by organic p-type 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN) layer and organic n-type 4,4',4 ' '-methylidynetris (N,N-dimethylaniline) (LCV) materials. The lowest operating voltage of the electron-only devices with a 2.5-wt.% LCV-doped BPhen layer was 4.02V. The highest values of the current density and the luminance of the p-i-n OLEDs were 429.8mA/cm 2 at 7.0V and 10,950cd/m 2 at 6.8V, respectively. The turn-on voltage and the power efficiency of the p-i-n OLEDs with a HAT-CN layer and a LCV-doped BPhen ETL were 2.46V and 2.76lm/W, respectively. The enhancement of the power efficiency and the decrease in the turn-on voltage of the p-i-n OLEDs were attributed to the improvement of the hole and electron injections due to the utilization of the p-type HAT-CN and the n-type LCV-doped BPhen layers. | en_US |
dc.description.sponsorship | This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2013-016467). | en_US |
dc.language.iso | en | en_US |
dc.publisher | Elsevier Science B.V., Amsterdam. | en_US |
dc.subject | Organic n-type materials | en_US |
dc.subject | Low operating voltage | en_US |
dc.subject | High power efficiency | en_US |
dc.title | Enhancement of the power efficiency for p-i-n OLEDs containing organic p-type HAT-CN and n-type LCV materials | en_US |
dc.type | Article | en_US |
dc.relation.volume | 15 | - |
dc.identifier.doi | 10.1016/j.orgel.2013.11.023 | - |
dc.relation.page | 343-347 | - |
dc.relation.journal | ORGANIC ELECTRONICS | - |
dc.contributor.googleauthor | Lee, Kwang Seop | - |
dc.contributor.googleauthor | Lim, Iseul | - |
dc.contributor.googleauthor | Han, Sung Hwan | - |
dc.contributor.googleauthor | Kim, Tae Whan | - |
dc.contributor.googleauthor | 한성환 | - |
dc.relation.code | 2014037107 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | twk | - |
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