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COLLEGE OF ENGINEERING[S](공과대학)
ELECTRONIC ENGINEERING(융합전자공학부)
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Results 1-3 of 3 (Search time: 0.001 seconds).
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2020-09
Investigation of f(T)-Doubler Technique to Improve RF Performance of Inverse-Mode SiGe HBTs
송익현
2020-05
Mitigation of single-event effects in SiGe HBT current-mode logic circuits
송익현
2020-05
Design and analysis of fT-doubler-based RF amplifiers in SiGe HBT technology
송익현
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silicon germanium (SiGe)
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silicon–germanium (SiGe)
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silicon-germanium (SiGe)
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single-event effects (SEE)
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single-event transients (SET)
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small-signal model
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through-silicon-via (TSV)
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unity-gain frequency
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