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Design and analysis of fT-doubler-based RF amplifiers in SiGe HBT technology

Title
Design and analysis of fT-doubler-based RF amplifiers in SiGe HBT technology
Author
송익현
Keywords
extreme-environment electronics; f T doubler; heterojunction bipolar transistor (HBT); radio-frequency amplifier (RFA); silicon-germanium (SiGe); through-silicon-via (TSV)
Issue Date
2020-05
Publisher
MDPI
Citation
ELECTRONICS, v.9, no. 5, article no. 772
Abstract
For performance-driven systems such as space-based applications, it is important to maximize the gain of radio-frequency amplifiers (RFAs) with a certain tolerance against radiation, temperature effects, and small form factor. In this work, we present a K-band, compact high-gain RFA using an f(T)-doubler topology in a silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) technology platform. The through-silicon vias (TSVs), typically used for small-size chip packaging purposes, have been effectively utilized as an adjustable matching element for input impedance, reducing the overall area of the chip. The proposed RFA, fabricated in a modest 0.35 mu m SiGe technology, achieves a gain of 14.1 dB at 20 GHz center frequency, and a noise figure (NF) of 11.2 dB at the same frequency, with a power consumption of 3.3 mW. The proposed design methodology can be used for achieving high gain, avoiding a complex multi-stage amplifier design approach.
URI
https://www.mdpi.com/2079-9292/9/5/772https://repository.hanyang.ac.kr/handle/20.500.11754/167123
ISSN
2079-9292
DOI
10.3390/electronics9050772
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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