Solution-Processable LaZrOx/SiO2 Gate Dielectric at Low Temperature of 180 degrees C for High-Performance Metal Oxide Field-Effect Transistors
- Title
- Solution-Processable LaZrOx/SiO2 Gate Dielectric at Low Temperature of 180 degrees C for High-Performance Metal Oxide Field-Effect Transistors
- Other Titles
- SiO2 Gate Dielectric at Low Temperature of 180 degrees C for High-Performance Metal Oxide Field-Effect Transistors
- Author
- 정재경
- Keywords
- solution process; silicon dioxide; lanthanum zirconium oxide; indium zinc oxide; field-effect transistor; low temperature; THIN-FILM TRANSISTORS; ROOM-TEMPERATURE; SOL-GEL; INSULATOR; FLUORINE; COATINGS; SURFACE; OXYGEN; PERHYDROPOLYSILAZANE; SEMICONDUCTORS
- Issue Date
- 2014-10
- Publisher
- AMER CHEMICAL SOC, 1155 16TH ST, NW, WASHINGTON, DC 20036 USA
- Citation
- ACS APPLIED MATERIALS & INTERFACES, 6권, 21호, pp.18693-18703
- Abstract
- Although solution-processable high-k inorganic dielectrics have been implemented as a gate insulator for high-performance, low-cost transition metal oxide field-effect transistors (FETs), the high-temperature annealing (>300 degrees C) required to achieve acceptable insulating properties still limits the facile realization of flexible electronics. This study reports that the addition of a 2-dimetylamino-1-propanol (DMAPO) catalyst to a perhydropolysilazane (PHPS) solution enables a significant reduction of the curing temperature for the resulting SiO2 dielectrics to as low as 180 degrees C. The hydrolysis and condensation of the as-spun PHPS film under humidity conditions were enhanced greatly by the presence of DMAPO, even at extremely low curing temperatures, which allowed a smooth surface (roughness of 0.31 nm) and acceptable leakage characteristics (1.8 X 10(-6) A/cm(2) at an electric field of 1MV/cm) of the resulting SiO2 dielectric films. Although the resulting indium zinc oxide (IZO) FETs exhibited an apparent high mobility of 261.6 cm(2)/(V s), they suffered from a low on/off current (ION/OFF) ratio and large hysteresis due to the hygroscopic property of silazane-derived SiO2 film. The I-ON/OFF value and hysteresis instability of IZO FETs was improved by capping the high-k IZO/LaZrOx dielectric on a solution-processed SiO2 film via sol gel processing at a low temperature of 180 degrees C while maintaining a high mobility of 24.8 cm(2)/(V s). This superior performance of the IZO FETs with a spin-coated LaZrOx/SiO2 bilayer gate insulator can be attributed to the efficient intercalation of the 5s orbital of 1n3+ ion in the IZO channel, the good interface matching of IZO/LaZrOx and the carrier blocking ability of PHPS-derived SiO2 dielectric film. Therefore, the solution-processable LaZrOx/SiO2 stack can be a promising candidate as a gate dielectric for low-temperature, high-performance, and low-cost flexible metal oxide FETs.
- URI
- http://dx.doi.org/10.1021/am504231hhttp://hdl.handle.net/20.500.11754/51035
- ISBN
- 1100-1106
- ISSN
- 1944-8244
- DOI
- 10.1021/am504231h
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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