Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 정재경 | - |
dc.date.accessioned | 2018-03-23T02:06:50Z | - |
dc.date.available | 2018-03-23T02:06:50Z | - |
dc.date.issued | 2014-10 | - |
dc.identifier.citation | ACS APPLIED MATERIALS & INTERFACES, 6권, 21호, pp.18693-18703 | en_US |
dc.identifier.isbn | 1100-1106 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | http://dx.doi.org/10.1021/am504231h | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/51035 | - |
dc.description.abstract | Although solution-processable high-k inorganic dielectrics have been implemented as a gate insulator for high-performance, low-cost transition metal oxide field-effect transistors (FETs), the high-temperature annealing (>300 degrees C) required to achieve acceptable insulating properties still limits the facile realization of flexible electronics. This study reports that the addition of a 2-dimetylamino-1-propanol (DMAPO) catalyst to a perhydropolysilazane (PHPS) solution enables a significant reduction of the curing temperature for the resulting SiO2 dielectrics to as low as 180 degrees C. The hydrolysis and condensation of the as-spun PHPS film under humidity conditions were enhanced greatly by the presence of DMAPO, even at extremely low curing temperatures, which allowed a smooth surface (roughness of 0.31 nm) and acceptable leakage characteristics (1.8 X 10(-6) A/cm(2) at an electric field of 1MV/cm) of the resulting SiO2 dielectric films. Although the resulting indium zinc oxide (IZO) FETs exhibited an apparent high mobility of 261.6 cm(2)/(V s), they suffered from a low on/off current (ION/OFF) ratio and large hysteresis due to the hygroscopic property of silazane-derived SiO2 film. The I-ON/OFF value and hysteresis instability of IZO FETs was improved by capping the high-k IZO/LaZrOx dielectric on a solution-processed SiO2 film via sol gel processing at a low temperature of 180 degrees C while maintaining a high mobility of 24.8 cm(2)/(V s). This superior performance of the IZO FETs with a spin-coated LaZrOx/SiO2 bilayer gate insulator can be attributed to the efficient intercalation of the 5s orbital of 1n3+ ion in the IZO channel, the good interface matching of IZO/LaZrOx and the carrier blocking ability of PHPS-derived SiO2 dielectric film. Therefore, the solution-processable LaZrOx/SiO2 stack can be a promising candidate as a gate dielectric for low-temperature, high-performance, and low-cost flexible metal oxide FETs. | en_US |
dc.description.sponsorship | Ministry of Knowledge Economy, Korea Evaluation Institute of Industrial Technology (MKE/ICEIT) | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER CHEMICAL SOC, 1155 16TH ST, NW, WASHINGTON, DC 20036 USA | en_US |
dc.subject | solution process | en_US |
dc.subject | silicon dioxide | en_US |
dc.subject | lanthanum zirconium oxide | en_US |
dc.subject | indium zinc oxide | en_US |
dc.subject | field-effect transistor | en_US |
dc.subject | low temperature | en_US |
dc.subject | THIN-FILM TRANSISTORS | en_US |
dc.subject | ROOM-TEMPERATURE | en_US |
dc.subject | SOL-GEL | en_US |
dc.subject | INSULATOR | en_US |
dc.subject | FLUORINE | en_US |
dc.subject | COATINGS | en_US |
dc.subject | SURFACE | en_US |
dc.subject | OXYGEN | en_US |
dc.subject | PERHYDROPOLYSILAZANE | en_US |
dc.subject | SEMICONDUCTORS | en_US |
dc.title | Solution-Processable LaZrOx/SiO2 Gate Dielectric at Low Temperature of 180 degrees C for High-Performance Metal Oxide Field-Effect Transistors | en_US |
dc.title.alternative | SiO2 Gate Dielectric at Low Temperature of 180 degrees C for High-Performance Metal Oxide Field-Effect Transistors | en_US |
dc.type | Article | en_US |
dc.relation.volume | 6 | - |
dc.identifier.doi | 10.1021/am504231h | - |
dc.relation.page | 18693-18703 | - |
dc.relation.journal | ACS APPLIED MATERIALS & INTERFACES | - |
dc.contributor.googleauthor | Je, So Yeon | - |
dc.contributor.googleauthor | Son, Byeong-Geun | - |
dc.contributor.googleauthor | Kim, Hyun-Gwan | - |
dc.contributor.googleauthor | Park, Man-Young | - |
dc.contributor.googleauthor | Do, Lee-Mi | - |
dc.contributor.googleauthor | Choi, Rino | - |
dc.contributor.googleauthor | Jeong, Jae Kyeong | - |
dc.relation.code | 2014023980 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | jkjeong1 | - |
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.