Effect of antimony doping on the low-temperature performance of solution-processed indium oxide thin film transistors
- Title
- Effect of antimony doping on the low-temperature performance of solution-processed indium oxide thin film transistors
- Author
- 정재경
- Keywords
- indium oxide semiconductors; antimony doping; lone-pair s-electron; photobias stability; thin film transistors
- Issue Date
- 2014-10
- Publisher
- John Wiley & Sons, Ltd
- Citation
- PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 8권, 11호, pp.924-927
- Abstract
- The effects of antimony (Sb) doping on solution-processed indium oxide (InOx) thin film transistors (TFTs) were examined. The Sb-doped InSbO TFT exhibited a high mobility, low gate swing, threshold voltage, and high I-ON/OFF ratio of 4.6 cm(2)/V s, 0.29 V/decade, 1.9 V, and 3 x 10(7), respectively. The gate bias and photobias stability of the InSbO TFTs were also improved by Sb doping compared to those of InOx TFTs. This improvement was attributed to the reduction of oxygen-related defects and/or the existence of the lone-pair s-electron of Sb3+ in amorphous InSbO films. ((c) 2014 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
- URI
- http://dx.doi.org/10.1002/pssr.201409402http://hdl.handle.net/20.500.11754/50492
- ISBN
- 1862-6270
- ISSN
- 1862-6254
- DOI
- 10.1002/pssr.201409402
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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