Repository at Hanyang UniversityCOLLEGE OF ENGINEERING[S](공과대학)ELECTRONIC ENGINEERING(융합전자공학부)Articles
271 0

Full metadata record

DC FieldValueLanguage
dc.contributor.author정재경-
dc.date.accessioned2018-03-22T05:26:45Z-
dc.date.available2018-03-22T05:26:45Z-
dc.date.issued2014-10-
dc.identifier.citationPHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 8권, 11호, pp.924-927en_US
dc.identifier.isbn1862-6270-
dc.identifier.issn1862-6254-
dc.identifier.urihttp://dx.doi.org/10.1002/pssr.201409402-
dc.identifier.urihttp://hdl.handle.net/20.500.11754/50492-
dc.description.abstractThe effects of antimony (Sb) doping on solution-processed indium oxide (InOx) thin film transistors (TFTs) were examined. The Sb-doped InSbO TFT exhibited a high mobility, low gate swing, threshold voltage, and high I-ON/OFF ratio of 4.6 cm(2)/V s, 0.29 V/decade, 1.9 V, and 3 x 10(7), respectively. The gate bias and photobias stability of the InSbO TFTs were also improved by Sb doping compared to those of InOx TFTs. This improvement was attributed to the reduction of oxygen-related defects and/or the existence of the lone-pair s-electron of Sb3+ in amorphous InSbO films. ((c) 2014 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)en_US
dc.description.sponsorshipNational Research Foundation of Korea (NRF) - Korean government (MEST) industrial strategic technology development program - MKE/MEITen_US
dc.language.isoenen_US
dc.publisherJohn Wiley & Sons, Ltden_US
dc.subjectindium oxide semiconductorsen_US
dc.subjectantimony dopingen_US
dc.subjectlone-pair s-electronen_US
dc.subjectphotobias stabilityen_US
dc.subjectthin film transistorsen_US
dc.titleEffect of antimony doping on the low-temperature performance of solution-processed indium oxide thin film transistorsen_US
dc.typeArticleen_US
dc.relation.volume8-
dc.identifier.doi10.1002/pssr.201409402-
dc.relation.page924-927-
dc.relation.journalPHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS-
dc.contributor.googleauthorKim, Hyo Jin-
dc.contributor.googleauthorJe, So Yeon-
dc.contributor.googleauthorWon, Ju Yeon-
dc.contributor.googleauthorBaek, Jong Han-
dc.contributor.googleauthorJeong, Jae Kyeong-
dc.relation.code2014037590-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDEPARTMENT OF ELECTRONIC ENGINEERING-
dc.identifier.pidjkjeong1-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML
Show simple item record


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE