Effect of MeV Nitrogen Ion Implantation on the Resistivity Transition in Czochralski Silicon Wafers
- Title
- Effect of MeV Nitrogen Ion Implantation on the Resistivity Transition in Czochralski Silicon Wafers
- Author
- 박재근
- Keywords
- Silicon; Ion implantation; Gettering; Nitrogen
- Issue Date
- 2012-12
- Publisher
- 한국물리학회
- Citation
- THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2012, 61(12), P.1981-1985, 5P.
- Abstract
- We investigated how MeV nitrogen ion implantation affects the resistivity transition in Czochralski (CZ) silicon wafers. After annealing at 800 degrees C for 20 h and again at 1000 degrees C for 10 h, the implanted nitrogen atoms accumulated in the projected range (R-P) for ion doses less than 5 x 10(14) cm(-2) whereas they accumulated at both R-P/2 and R-P at ion doses above 3 x 10(15) cm(-2). These results indicate that no resistivity transition was found at nitrogen ion doses less than 5 x 10(13) cm(-2) whereas n(-)/p or n(+)/p resistivity transition was shown at ion doses higher than 5 x 10(14) cm(-2). Many fewer than 1% of the implanted nitrogen atoms were ionized after the heat treatment. Thus, the resistivity of nitrogen-doped silicon wafers is more than 100 times higher than that of phosphorous-doped silicon wafers.
- URI
- https://link.springer.com/article/10.3938/jkps.61.1981http://hdl.handle.net/20.500.11754/48207
- ISSN
- 0374-4884
- DOI
- 10.3938/jkps.61.1981
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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