Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박재근 | - |
dc.date.accessioned | 2018-03-17T01:53:33Z | - |
dc.date.available | 2018-03-17T01:53:33Z | - |
dc.date.issued | 2012-12 | - |
dc.identifier.citation | THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2012, 61(12), P.1981-1985, 5P. | en_US |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://link.springer.com/article/10.3938/jkps.61.1981 | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/48207 | - |
dc.description.abstract | We investigated how MeV nitrogen ion implantation affects the resistivity transition in Czochralski (CZ) silicon wafers. After annealing at 800 degrees C for 20 h and again at 1000 degrees C for 10 h, the implanted nitrogen atoms accumulated in the projected range (R-P) for ion doses less than 5 x 10(14) cm(-2) whereas they accumulated at both R-P/2 and R-P at ion doses above 3 x 10(15) cm(-2). These results indicate that no resistivity transition was found at nitrogen ion doses less than 5 x 10(13) cm(-2) whereas n(-)/p or n(+)/p resistivity transition was shown at ion doses higher than 5 x 10(14) cm(-2). Many fewer than 1% of the implanted nitrogen atoms were ionized after the heat treatment. Thus, the resistivity of nitrogen-doped silicon wafers is more than 100 times higher than that of phosphorous-doped silicon wafers. | en_US |
dc.description.sponsorship | This work was financially supported by the grant from the “Next-generation Substrate technology for high performance semiconductor devices (No. KI002083)” of the Ministry of Knowledge Economy (MKE), by the Brain Korea 21 Project in 2012, and by SiWEDS (Silicon Wafer Engineering and Defect Science), an Industry/University Cooperative Research Center under the National Science Foundation (NSF) Grant. | en_US |
dc.language.iso | en | en_US |
dc.publisher | 한국물리학회 | en_US |
dc.subject | Silicon | en_US |
dc.subject | Ion implantation | en_US |
dc.subject | Gettering | en_US |
dc.subject | Nitrogen | en_US |
dc.title | Effect of MeV Nitrogen Ion Implantation on the Resistivity Transition in Czochralski Silicon Wafers | en_US |
dc.type | Article | en_US |
dc.relation.no | 12 | - |
dc.relation.volume | 61 | - |
dc.identifier.doi | 10.3938/jkps.61.1981 | - |
dc.relation.page | 1981-1985 | - |
dc.relation.journal | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.contributor.googleauthor | Moon, Byeong-Sam | - |
dc.contributor.googleauthor | Lee, In-Ji | - |
dc.contributor.googleauthor | Park, Jea-Gun | - |
dc.relation.code | 2012205987 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | parkjgl | - |
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