Low resistivity of Ni-Al co-doped ZnO thin films deposited by DC magnetron sputtering at low sputtering power
- Title
- Low resistivity of Ni-Al co-doped ZnO thin films deposited by DC magnetron sputtering at low sputtering power
- Author
- Kwan-San Hui
- Keywords
- Al-doped ZnO; NiO; Transparent conducting oxide; DC magnetron sputtering; Electrical properties; P-TYPE GAN; OPTICAL-PROPERTIES; OHMIC CONTACTS; LOW-RESISTANCE; NANOWIRES; DOPANT
- Issue Date
- 2014-02
- Publisher
- ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
- Citation
- APPLIED SURFACE SCIENCE, Vol.293, No.- [2014], pp 55-61
- Abstract
- Ni-Al co-doped ZnO (NiAl:ZnO) thin films were deposited on glass substrates by DC magnetron sputtering in Ar using a single ceramic, spark-plasma-sintered target with 2 wt% Al and 5 wt% Ni. The effects of the sputtering power and gas pressure on the NiAl:ZnO films were studied. The structural, electrical, and optical properties of the films were characterized by X-ray diffraction, field emission scanning electron microscopy, Hall effect measurements and UV-vis transmission spectroscopy. As the sputtering power and gas pressure increased, the crystallinity, electrical properties and optical band gap of the films were improved. The NiAl:ZnO film deposited at 40W at 6.0 mTorr had the strongest (002) XRD peak and the lowest resistivity of approximately 2.19 10(-3) Omega cm with an optical transmittance of 90%. (C) 2013 Elsevier B.V. All rights reserved.
- URI
- https://www.sciencedirect.com/science/article/pii/S0169433213023428?via%3Dihubhttp://hdl.handle.net/20.500.11754/47746
- ISSN
- 0169-4332; 1873-5584
- DOI
- 10.1016/j.apsusc.2013.12.071
- Appears in Collections:
- COLLEGE OF ENGINEERING[S](공과대학) > MECHANICAL ENGINEERING(기계공학부) > Articles
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