Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kwan-San Hui | - |
dc.date.accessioned | 2018-03-16T03:59:13Z | - |
dc.date.available | 2018-03-16T03:59:13Z | - |
dc.date.issued | 2014-02 | - |
dc.identifier.citation | APPLIED SURFACE SCIENCE, Vol.293, No.- [2014], pp 55-61 | en_US |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.issn | 1873-5584 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0169433213023428?via%3Dihub | - |
dc.identifier.uri | http://hdl.handle.net/20.500.11754/47746 | - |
dc.description.abstract | Ni-Al co-doped ZnO (NiAl:ZnO) thin films were deposited on glass substrates by DC magnetron sputtering in Ar using a single ceramic, spark-plasma-sintered target with 2 wt% Al and 5 wt% Ni. The effects of the sputtering power and gas pressure on the NiAl:ZnO films were studied. The structural, electrical, and optical properties of the films were characterized by X-ray diffraction, field emission scanning electron microscopy, Hall effect measurements and UV-vis transmission spectroscopy. As the sputtering power and gas pressure increased, the crystallinity, electrical properties and optical band gap of the films were improved. The NiAl:ZnO film deposited at 40W at 6.0 mTorr had the strongest (002) XRD peak and the lowest resistivity of approximately 2.19 10(-3) Omega cm with an optical transmittance of 90%. (C) 2013 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | Basic Science Research Program through the National Research Foundation of Korea (NRF)Ministry of Education, Science and Technology Korea government (MEST) through GCRC-SOP | en_US |
dc.language.iso | en | en_US |
dc.publisher | ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS | en_US |
dc.subject | Al-doped ZnO | en_US |
dc.subject | NiO | en_US |
dc.subject | Transparent conducting oxide | en_US |
dc.subject | DC magnetron sputtering | en_US |
dc.subject | Electrical properties | en_US |
dc.subject | P-TYPE GAN | en_US |
dc.subject | OPTICAL-PROPERTIES | en_US |
dc.subject | OHMIC CONTACTS | en_US |
dc.subject | LOW-RESISTANCE | en_US |
dc.subject | NANOWIRES | en_US |
dc.subject | DOPANT | en_US |
dc.title | Low resistivity of Ni-Al co-doped ZnO thin films deposited by DC magnetron sputtering at low sputtering power | en_US |
dc.type | Article | en_US |
dc.relation.volume | 293 | - |
dc.identifier.doi | 10.1016/j.apsusc.2013.12.071 | - |
dc.relation.page | 55-61 | - |
dc.relation.journal | APPLIED SURFACE SCIENCE | - |
dc.contributor.googleauthor | Lee, J | - |
dc.contributor.googleauthor | Hui, KN | - |
dc.contributor.googleauthor | Hui, KS | - |
dc.contributor.googleauthor | Cho, YR | - |
dc.contributor.googleauthor | Chun, HH | - |
dc.relation.code | 2014025359 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MECHANICAL ENGINEERING | - |
dc.identifier.pid | kshui | - |
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